Datasheet HMC-APH460 (Analog Devices)
| Manufacturer | Analog Devices |
| Description | GaAs HEMT MMIC 0.5 WATT POWER AMPLIFIER, 27 - 31.5 GHz |
| Pages / Page | 6 / 1 — HMC-APH460. GaAs HEMT MMIC 0.5 WATT POWER. AMPLIFIER, 27 - 31.5 GHz. … |
| File Format / Size | PDF / 313 Kb |
| Document Language | English |
HMC-APH460. GaAs HEMT MMIC 0.5 WATT POWER. AMPLIFIER, 27 - 31.5 GHz. Typical Applications. Features. Functional Diagram
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HMC-APH460
v02.0208
GaAs HEMT MMIC 0.5 WATT POWER AMPLIFIER, 27 - 31.5 GHz Typical Applications Features
This HMC-APH460 is ideal for: Output IP3: +37 dBm • Point-to-Point Radios P1dB: +28 dBm 3 • Point-to-Multi-Point Radios Gain: 14 dB • VSAT Supply Voltage: +5V • Military & Space 50 Ohm Matched Input/Output IP Die Size: 3.10 x 1.26 x 0.1 mm H S - C
Functional Diagram General Description
R The HMC-APH460 is a two stage GaAs HEMT MMIC IE 0.5 Watt Power Amplifi er which operates between IF 27 and 31.5 GHz. The HMC-APH460 provides L 14 dB of gain, and an output power of +28 dBm at P 1 dB compression from a +5V supply voltage. All M bond pads and the die backside are Ti/Au metallized and the amplifi er device is fully passivated for reliable R A operation. The HMC-APH460 GaAs HEMT MMIC E 0.5 Watt Power Amplifi er is compatible with conven- W tional die attach methods, as well as thermo- O compression and thermosonic wirebonding, making it ideal for MCM and hybrid microcircuit applications. All data Shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes. R & P A E IN
Electrical Specifi cations[1], T = +25° C, Vdd1 = Vdd2 = 5V, Idd1 + Idd2 = 900 mA
[2] L
A
Parameter Min. Typ. Max. Units Frequency Range 27 - 31.5 GHz Gain 12 14 dB Input Return Loss 7 dB Output Return Loss 10 dB Output power for 1dB Compression (P1dB) 28 dBm Output Third Order Intercept (IP3) 37 dBm Saturated Output Power (Psat) 30 dBm Supply Current (Idd1+Idd2) 900 mA [1] Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg1=Vgg2 between -1V to +0.3V (typ -0.5V) to achieve Idd1 = 300 mA, Idd2 = 600 mA Information furnish F ed obr pri y Anal ce, de og Device li s vie s r beyli, a eve nd to pla d to be accura ce o te and rder reliabl s e , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No
3 - 172
20 Alpha Road, Chelmsford, MA 01824 Phone: 978 Phon - e 25 : 7 0 81--3 32 3 9 4 - 3 F 70 ax 0 • O : 978 rder on -li25 n 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com Order On Trademarks and registered trademarks are the property of their respective owners. -line at www.h A it p tpite.co licatio m n Support: Phone: 1-800-ANALOG-D
v02.0208
GaAs HEMT MMIC 0.5 WATT POWER AMPLIFIER, 27 - 31.5 GHz Typical Applications Features
This HMC-APH460 is ideal for: Output IP3: +37 dBm • Point-to-Point Radios P1dB: +28 dBm 3 • Point-to-Multi-Point Radios Gain: 14 dB • VSAT Supply Voltage: +5V • Military & Space 50 Ohm Matched Input/Output IP Die Size: 3.10 x 1.26 x 0.1 mm H S - C
Functional Diagram General Description
R The HMC-APH460 is a two stage GaAs HEMT MMIC IE 0.5 Watt Power Amplifi er which operates between IF 27 and 31.5 GHz. The HMC-APH460 provides L 14 dB of gain, and an output power of +28 dBm at P 1 dB compression from a +5V supply voltage. All M bond pads and the die backside are Ti/Au metallized and the amplifi er device is fully passivated for reliable R A operation. The HMC-APH460 GaAs HEMT MMIC E 0.5 Watt Power Amplifi er is compatible with conven- W tional die attach methods, as well as thermo- O compression and thermosonic wirebonding, making it ideal for MCM and hybrid microcircuit applications. All data Shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes. R & P A E IN
Electrical Specifi cations[1], T = +25° C, Vdd1 = Vdd2 = 5V, Idd1 + Idd2 = 900 mA
[2] L
A
Parameter Min. Typ. Max. Units Frequency Range 27 - 31.5 GHz Gain 12 14 dB Input Return Loss 7 dB Output Return Loss 10 dB Output power for 1dB Compression (P1dB) 28 dBm Output Third Order Intercept (IP3) 37 dBm Saturated Output Power (Psat) 30 dBm Supply Current (Idd1+Idd2) 900 mA [1] Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg1=Vgg2 between -1V to +0.3V (typ -0.5V) to achieve Idd1 = 300 mA, Idd2 = 600 mA Information furnish F ed obr pri y Anal ce, de og Device li s vie s r beyli, a eve nd to pla d to be accura ce o te and rder reliabl s e , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No
3 - 172
20 Alpha Road, Chelmsford, MA 01824 Phone: 978 Phon - e 25 : 7 0 81--3 32 3 9 4 - 3 F 70 ax 0 • O : 978 rder on -li25 n 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com Order On Trademarks and registered trademarks are the property of their respective owners. -line at www.h A it p tpite.co licatio m n Support: Phone: 1-800-ANALOG-D
