Datasheet HMC464LP5E (Analog Devices) - 6
| Manufacturer | Analog Devices |
| Description | GaAs PHEMT MMIC POWER AMPLIFIER, 2 - 20 GHz |
| Pages / Page | 9 / 6 — HMC464LP5E. GAAS PHEMT MMIC. POWER AMPLIFIER, 2 - 20 GHz. Output IP3 vs. … |
| File Format / Size | PDF / 1.2 Mb |
| Document Language | English |
HMC464LP5E. GAAS PHEMT MMIC. POWER AMPLIFIER, 2 - 20 GHz. Output IP3 vs. Temperature @ Vdd=5V,. Gain, Power & Output IP3
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Text Version of Document
HMC464LP5E
v04.0218
GAAS PHEMT MMIC POWER AMPLIFIER, 2 - 20 GHz Output IP3 vs. Temperature @ Vdd=5V, Gain, Power & Output IP3 Vgg2=2V, Iddq=200mA vs. Supply Voltage @ 10 GHz, Fixed Vgg1
45 ) 32 m B 40 d 30 ( 3 T 28 35 ), IP 26 M m ) B m d 24 30 S B d t ( a ( 22 s 3 Gain 25 IP ), P 20 P1dB Psat S - m B 18 IP3 20 d +25C R ( +85C B 16 d -40C 1 15 14 IE ), P B 12 d 10 ( in 10 LIF 0 2 4 6 8 10 12 14 16 18 20 a G 7.5 8 8.5 P FREQUENCY (GHz) Vdd (V) M R A E W O P
Absolute Maximum Ratings Typical Supply Current vs. Vdd
Drain Bias Voltage (Vdd) +9 Vdc Vdd (V) Idd (mA) R & Gate Bias Voltage (Vgg1) -2 to 0 Vdc A +7.5 292 E Gate Bias Voltage (Vgg2) (Vdd -8.0) Vdc to Vdd +8.0 290 RF Input Power (RFIN)(Vdd = +8 Vdc) +20 dBm +8.5 288 Channel Temperature 150 °C LIN Continuous Pdiss (T= 85 °C) 3.35 W (derate 51.5 mW/°C above 85 °C) ELECTROSTATIC SENSITIVE DEVICE Thermal Resistance 19.4 °C/W OBSERVE HANDLING PRECAUTIONS (channel to ground paddle) Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ESD Sensitivity (HBM) Class 1A For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D
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v04.0218
GAAS PHEMT MMIC POWER AMPLIFIER, 2 - 20 GHz Output IP3 vs. Temperature @ Vdd=5V, Gain, Power & Output IP3 Vgg2=2V, Iddq=200mA vs. Supply Voltage @ 10 GHz, Fixed Vgg1
45 ) 32 m B 40 d 30 ( 3 T 28 35 ), IP 26 M m ) B m d 24 30 S B d t ( a ( 22 s 3 Gain 25 IP ), P 20 P1dB Psat S - m B 18 IP3 20 d +25C R ( +85C B 16 d -40C 1 15 14 IE ), P B 12 d 10 ( in 10 LIF 0 2 4 6 8 10 12 14 16 18 20 a G 7.5 8 8.5 P FREQUENCY (GHz) Vdd (V) M R A E W O P
Absolute Maximum Ratings Typical Supply Current vs. Vdd
Drain Bias Voltage (Vdd) +9 Vdc Vdd (V) Idd (mA) R & Gate Bias Voltage (Vgg1) -2 to 0 Vdc A +7.5 292 E Gate Bias Voltage (Vgg2) (Vdd -8.0) Vdc to Vdd +8.0 290 RF Input Power (RFIN)(Vdd = +8 Vdc) +20 dBm +8.5 288 Channel Temperature 150 °C LIN Continuous Pdiss (T= 85 °C) 3.35 W (derate 51.5 mW/°C above 85 °C) ELECTROSTATIC SENSITIVE DEVICE Thermal Resistance 19.4 °C/W OBSERVE HANDLING PRECAUTIONS (channel to ground paddle) Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ESD Sensitivity (HBM) Class 1A For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D
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