Datasheet HMC327MS8G, 327MS8GE (Analog Devices)
| Manufacturer | Analog Devices |
| Description | GaAs InGaP HBT MMIC 1/2 WATT POWER AMPLIFIER, 3 - 4 GHz |
| Pages / Page | 6 / 1 — HMC327MS8G / 327MS8GE. GaAs InGaP HBT MMIC. 1/2 WATT POWER AMPLIFIER, 3 - … |
| File Format / Size | PDF / 330 Kb |
| Document Language | English |
HMC327MS8G / 327MS8GE. GaAs InGaP HBT MMIC. 1/2 WATT POWER AMPLIFIER, 3 - 4 GHz. Typical Applications. Features
Model Line for this Datasheet
Text Version of Document
HMC327MS8G / 327MS8GE
v06.1209
GaAs InGaP HBT MMIC 1/2 WATT POWER AMPLIFIER, 3 - 4 GHz Typical Applications Features
The HMC327MS8G(E) is ideal for: High Gain: 21 dB • Wireless Local Loop Saturated Power: +30 dBm @ 45% PAE • WiMAX & Fixed Wireless Output P1dB: +27 dBm • Access Points Single Supply: +5V 11 • Subscriber Equipment Power Down Capability Low External Part Count Compact MSOP Package: 14.8 mm2 T
Functional Diagram General Description
- SM S The HMC327MS8G(E) is a high efficiency GaAs R InGaP Heterojunction Bipolar Transistor (HBT) MMIC IE power amplifi er which operates between 3 and 4 GHz. The amplifi er is packaged in a low cost, surface mo- IF L unt 8 leaded package with an exposed base for P improved RF and thermal performance. With a mini- M mum of external components, the amplifi er provides 21 dB of gain, +30 dBm of saturated power at 45% PAE from a single +5V supply. Power down capability R A is available to conserve current consumption when the E amplifi er is not in use. W O & P R A
Electrical Specifi cations, T = +25 °C, Vs = 5V, Vctl = 5V A
E Parameter Min. Typ. Max. Units IN Frequency Range 3 - 4 GHz L Gain 17 21 24 dB Gain Variation Over Temperature 0.025 0.035 dB / °C Input Return Loss 15 dB Output Return Loss 8 dB Output Power for 1dB Compression (P1dB) 24 27 dBm Saturated Output Power (Psat) 30 dBm Output Third Order Intercept (IP3) 36 40 dBm Noise Figure 5 dB Supply Current (Icq) Vctl* = 0V/5V 0.002 / 250 mA Control Current (Ipd) Vctl* = 5V 7 mA Switching Speed tON, tOFF 40 ns *See Application Circuit for proper biasing confi guration. Information furnish F e o d r pri by An ce, de alog Devic leis vie s rby eli, a eve nd to pla d to be accur ce o ate an r d der relia s ble , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone rights of third parties that may result from its use. Specifications subject to change without notice. No : 978 Phon -e25 : 7 0 81 - - 3 3 3 29 4 - 3 F 470 ax 0 • O : 978 rder o - nl 25 in 0 e a - t 33 ww 73
11 - 2
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com Order On- Trademarks and registered trademarks are the property of their respective owners. line at www.hi A tptipte.co licatio m n Support: Phone: 1-800-ANALOG-D
v06.1209
GaAs InGaP HBT MMIC 1/2 WATT POWER AMPLIFIER, 3 - 4 GHz Typical Applications Features
The HMC327MS8G(E) is ideal for: High Gain: 21 dB • Wireless Local Loop Saturated Power: +30 dBm @ 45% PAE • WiMAX & Fixed Wireless Output P1dB: +27 dBm • Access Points Single Supply: +5V 11 • Subscriber Equipment Power Down Capability Low External Part Count Compact MSOP Package: 14.8 mm2 T
Functional Diagram General Description
- SM S The HMC327MS8G(E) is a high efficiency GaAs R InGaP Heterojunction Bipolar Transistor (HBT) MMIC IE power amplifi er which operates between 3 and 4 GHz. The amplifi er is packaged in a low cost, surface mo- IF L unt 8 leaded package with an exposed base for P improved RF and thermal performance. With a mini- M mum of external components, the amplifi er provides 21 dB of gain, +30 dBm of saturated power at 45% PAE from a single +5V supply. Power down capability R A is available to conserve current consumption when the E amplifi er is not in use. W O & P R A
Electrical Specifi cations, T = +25 °C, Vs = 5V, Vctl = 5V A
E Parameter Min. Typ. Max. Units IN Frequency Range 3 - 4 GHz L Gain 17 21 24 dB Gain Variation Over Temperature 0.025 0.035 dB / °C Input Return Loss 15 dB Output Return Loss 8 dB Output Power for 1dB Compression (P1dB) 24 27 dBm Saturated Output Power (Psat) 30 dBm Output Third Order Intercept (IP3) 36 40 dBm Noise Figure 5 dB Supply Current (Icq) Vctl* = 0V/5V 0.002 / 250 mA Control Current (Ipd) Vctl* = 5V 7 mA Switching Speed tON, tOFF 40 ns *See Application Circuit for proper biasing confi guration. Information furnish F e o d r pri by An ce, de alog Devic leis vie s rby eli, a eve nd to pla d to be accur ce o ate an r d der relia s ble , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone rights of third parties that may result from its use. Specifications subject to change without notice. No : 978 Phon -e25 : 7 0 81 - - 3 3 3 29 4 - 3 F 470 ax 0 • O : 978 rder o - nl 25 in 0 e a - t 33 ww 73
11 - 2
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com Order On- Trademarks and registered trademarks are the property of their respective owners. line at www.hi A tptipte.co licatio m n Support: Phone: 1-800-ANALOG-D
