Datasheet LT1990-10 (Analog Devices) - 6
| Manufacturer | Analog Devices |
| Description | ±250V Input Range, 100kHz, G =10, Micropower, Difference Amplifier |
| Pages / Page | 16 / 6 — ELECTRICAL CHARACTERISTICS. The. denotes the specifications which apply … |
| File Format / Size | PDF / 271 Kb |
| Document Language | English |
ELECTRICAL CHARACTERISTICS. The. denotes the specifications which apply over the temperature range of
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Text Version of Document
LT1990-10
ELECTRICAL CHARACTERISTICS The
l
denotes the specifications which apply over the temperature range of -40°C ≤ TA ≤ 85°C. VS = ±15V, RL = 10kΩ, VCM = VREF = 0V, unless otherwise noted. (Note 4) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
∆G Gain Error VOUT = ±10V l 0.95 % GNL Gain Nonlinearity VOUT = ±10V l 0.03 % ∆G/∆T Gain vs Temperature (Note 9) l 7 20 ppm/°C VCM Input Voltage Range Guaranteed by CMRR l -250 250 V CMRR Common Mode Rejection Ratio, RTI VCM = –250V to 250V l 58 dB VOS Offset Voltage, RTI l 6.7 mV ∆VOS/∆T Input Offset Voltage Drift, RTI (Note 9) l 5 22 µV/°C VOSH Input Offset Voltage Hysteresis, RTI (Note 10) l 250 µV PSRR Power Supply Rejection Ratio, RTI VS = ±1.35V to ±18V, VCM = VREF = 1.25V l 78 dB Minimum Supply Voltage Guaranteed by PSRR l ±1.35 V IS Supply Current l 375 µA VOUT Output Voltage Swing l ±14.3 V ISC Output Short-Circuit Current Short to V- l 3 mA Short to V+ l 10 mA SR Slew Rate VOUT = ±10V, No RL l 0.4 V/µs
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings
Note 5:
The LT1990I-10 is guaranteed to meet specified performance from may cause permanent damage to the device. Exposure to any Absolute –40°C to 85°C. Maximum Rating condition for extended periods may affect device
Note 6:
Limits are guaranteed by correlation to –5V to 80V CMRR tests. reliability and lifetime.
Note 7:
VS = 3V limits are guaranteed by correlation to VS = 5V and
Note 2:
ESD (Electrostatic Discharge) sensitive device. Extensive use of VS = ±15V tests. ESD protection devices are used internal to the LT1990-10, however, high
Note 8:
V electrostatic discharge can damage or degrade the device. Use proper ESD S = 5V limits are guaranteed by correlation to VS = 3V and V handling precautions. S = ±15V tests.
Note 9:
This parameter is not 100% tested.
Note 3:
A heat sink may be required to keep the junction temperature below absolute maximum.
Note 10:
Hysteresis in offset voltage is created by package stress that differs depending on whether the IC was previously at a higher or lower
Note 4:
The LT1990I-10 is designed, characterized and expected to be temperature. Offset voltage hysteresis is always measured at 25°C, but the functional over the operating temperature range of –55°C to 125°C, but is IC is cycled to 85°C or –40°C before successive measurement. not tested or QA sampled at these temperatures. Rev 0 6 For more information www.analog.com Document Outline Features Applications Typical Application Description Absolute Maximum Ratings Pin Configuration Order Information 3V/5V Electrical Characteristics Electrical Characteristics ±15V Electrical Characteristics Electrical Characteristics Typical Performance Characteristics Pin Functions Block Diagram Applications Information Package Description Typical Applications Related Parts
ELECTRICAL CHARACTERISTICS The
l
denotes the specifications which apply over the temperature range of -40°C ≤ TA ≤ 85°C. VS = ±15V, RL = 10kΩ, VCM = VREF = 0V, unless otherwise noted. (Note 4) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
∆G Gain Error VOUT = ±10V l 0.95 % GNL Gain Nonlinearity VOUT = ±10V l 0.03 % ∆G/∆T Gain vs Temperature (Note 9) l 7 20 ppm/°C VCM Input Voltage Range Guaranteed by CMRR l -250 250 V CMRR Common Mode Rejection Ratio, RTI VCM = –250V to 250V l 58 dB VOS Offset Voltage, RTI l 6.7 mV ∆VOS/∆T Input Offset Voltage Drift, RTI (Note 9) l 5 22 µV/°C VOSH Input Offset Voltage Hysteresis, RTI (Note 10) l 250 µV PSRR Power Supply Rejection Ratio, RTI VS = ±1.35V to ±18V, VCM = VREF = 1.25V l 78 dB Minimum Supply Voltage Guaranteed by PSRR l ±1.35 V IS Supply Current l 375 µA VOUT Output Voltage Swing l ±14.3 V ISC Output Short-Circuit Current Short to V- l 3 mA Short to V+ l 10 mA SR Slew Rate VOUT = ±10V, No RL l 0.4 V/µs
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings
Note 5:
The LT1990I-10 is guaranteed to meet specified performance from may cause permanent damage to the device. Exposure to any Absolute –40°C to 85°C. Maximum Rating condition for extended periods may affect device
Note 6:
Limits are guaranteed by correlation to –5V to 80V CMRR tests. reliability and lifetime.
Note 7:
VS = 3V limits are guaranteed by correlation to VS = 5V and
Note 2:
ESD (Electrostatic Discharge) sensitive device. Extensive use of VS = ±15V tests. ESD protection devices are used internal to the LT1990-10, however, high
Note 8:
V electrostatic discharge can damage or degrade the device. Use proper ESD S = 5V limits are guaranteed by correlation to VS = 3V and V handling precautions. S = ±15V tests.
Note 9:
This parameter is not 100% tested.
Note 3:
A heat sink may be required to keep the junction temperature below absolute maximum.
Note 10:
Hysteresis in offset voltage is created by package stress that differs depending on whether the IC was previously at a higher or lower
Note 4:
The LT1990I-10 is designed, characterized and expected to be temperature. Offset voltage hysteresis is always measured at 25°C, but the functional over the operating temperature range of –55°C to 125°C, but is IC is cycled to 85°C or –40°C before successive measurement. not tested or QA sampled at these temperatures. Rev 0 6 For more information www.analog.com Document Outline Features Applications Typical Application Description Absolute Maximum Ratings Pin Configuration Order Information 3V/5V Electrical Characteristics Electrical Characteristics ±15V Electrical Characteristics Electrical Characteristics Typical Performance Characteristics Pin Functions Block Diagram Applications Information Package Description Typical Applications Related Parts
