Datasheet STFW4N150, STP4N150, STW4N150 (STMicroelectronics) - 3
| Manufacturer | STMicroelectronics |
| Description | N-channel 1500 V, 5 Ω, 4 A, PowerMESH Power MOSFET in TO-220, TO-247, TO-3PF |
| Pages / Page | 15 / 3 — STFW4N150, STP4N150, STW4N150. Electrical ratings. 1 Electrical. ratings. … |
| File Format / Size | PDF / 772 Kb |
| Document Language | English |
STFW4N150, STP4N150, STW4N150. Electrical ratings. 1 Electrical. ratings. Table 2. Absolute maximum ratings. Value. Symbol. Parameter
Model Line for this Datasheet
Text Version of Document
STFW4N150, STP4N150, STW4N150 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220 TO-247 TO-3PF
VDS Drain-source voltage (VGS = 0) 1500 V VGS Gate- source voltage ± 30 V Drain current (continuous) at ID 4 4 4 (1) A TC = 25 °C Drain current (continuous) at ID 2.5 2.5 2.5 (1) A TC = 100 °C I (1) DM Drain current (pulsed) 12 12 12 (1) A PTOT Total dissipation at TC = 25 °C 160 63 W Insulation withstand voltage (RMS) VISO from all three leads to external heat 3500 V sink (t=1 s;TC=25 °C) Tstg Storage temperature -55 to 150 °C Tj Max. operating junction temperature 150 °C 1. Pulse width limited by safe operating area
Table 3. Thermal data Value Symbol Parameter Unit TO-220 TO-247 TO-3PF
Thermal resistance junction-case Rthj-case 0.78 2 °C/W max Thermal resistance junction- Rthj-amb 62.5 50 °C/W ambient max
Table 4. Avalanche characteristics Symbol Parameter Value Unit
Avalanche current, repetitive or not-repetitive IAR 4 A (pulse width limited by Tj max) Single pulse avalanche energy EAS 350 mJ (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Doc ID 11262 Rev 9 3/15 Document Outline Figure 1. Internal schematic diagram. Table 1. Device summary 1 Electrical ratings Table 2. Absolute maximum ratings Table 3. Thermal data Table 4. Avalanche characteristics 2 Electrical characteristics Table 5. On/off states Table 6. Dynamic Table 7. Source drain diode 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 Figure 3. Thermal impedance for TO-220 Figure 4. Safe operating area for TO-3PF Figure 5. Thermal impedance for TO-3PF Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247 Figure 8. Output characteristics Figure 9. Transfer characteristics Figure 10. Transconductance Figure 11. Static drain-source on resistance Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations Figure 14. Normalized gate threshold voltage vs temperature Figure 15. Normalized on resistance vs temperature Figure 16. Source-drain diode forward characteristics Figure 17. Normalized BVDSS vs temperature Figure 18. Maximum avalanche energy vs temperature 3 Test circuits Figure 19. Switching times test circuit for resistive load Figure 20. Gate charge test circuit Figure 21. Test circuit for inductive load switching and diode recovery times Figure 22. Unclamped inductive load test circuit Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform 4 Package mechanical data 5 Revision history Table 8. Document revision history
VDS Drain-source voltage (VGS = 0) 1500 V VGS Gate- source voltage ± 30 V Drain current (continuous) at ID 4 4 4 (1) A TC = 25 °C Drain current (continuous) at ID 2.5 2.5 2.5 (1) A TC = 100 °C I (1) DM Drain current (pulsed) 12 12 12 (1) A PTOT Total dissipation at TC = 25 °C 160 63 W Insulation withstand voltage (RMS) VISO from all three leads to external heat 3500 V sink (t=1 s;TC=25 °C) Tstg Storage temperature -55 to 150 °C Tj Max. operating junction temperature 150 °C 1. Pulse width limited by safe operating area
Table 3. Thermal data Value Symbol Parameter Unit TO-220 TO-247 TO-3PF
Thermal resistance junction-case Rthj-case 0.78 2 °C/W max Thermal resistance junction- Rthj-amb 62.5 50 °C/W ambient max
Table 4. Avalanche characteristics Symbol Parameter Value Unit
Avalanche current, repetitive or not-repetitive IAR 4 A (pulse width limited by Tj max) Single pulse avalanche energy EAS 350 mJ (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Doc ID 11262 Rev 9 3/15 Document Outline Figure 1. Internal schematic diagram. Table 1. Device summary 1 Electrical ratings Table 2. Absolute maximum ratings Table 3. Thermal data Table 4. Avalanche characteristics 2 Electrical characteristics Table 5. On/off states Table 6. Dynamic Table 7. Source drain diode 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 Figure 3. Thermal impedance for TO-220 Figure 4. Safe operating area for TO-3PF Figure 5. Thermal impedance for TO-3PF Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247 Figure 8. Output characteristics Figure 9. Transfer characteristics Figure 10. Transconductance Figure 11. Static drain-source on resistance Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations Figure 14. Normalized gate threshold voltage vs temperature Figure 15. Normalized on resistance vs temperature Figure 16. Source-drain diode forward characteristics Figure 17. Normalized BVDSS vs temperature Figure 18. Maximum avalanche energy vs temperature 3 Test circuits Figure 19. Switching times test circuit for resistive load Figure 20. Gate charge test circuit Figure 21. Test circuit for inductive load switching and diode recovery times Figure 22. Unclamped inductive load test circuit Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform 4 Package mechanical data 5 Revision history Table 8. Document revision history
