Datasheet ADG708, ADG709 (Analog Devices) - 3
| Manufacturer | Analog Devices |
| Description | CMOS, 1.8 V to 5.5 V/±2.5 V, 3 Ω Low Voltage 4-/8-Channel Multiplexers |
| Pages / Page | 20 / 3 — Data Sheet. ADG708/ADG709. SPECIFICATIONS. Table 1. B Version. C Version. … |
| Revision | E |
| File Format / Size | PDF / 333 Kb |
| Document Language | English |
Data Sheet. ADG708/ADG709. SPECIFICATIONS. Table 1. B Version. C Version. −40°C to −40°C to. Test Conditions/. Parameter. +25°C +85°C
Model Line for this Datasheet
Text Version of Document
link to page 15 link to page 15 link to page 15 link to page 15 link to page 15 link to page 15 link to page 16 link to page 16 link to page 16 link to page 16 link to page 4
Data Sheet ADG708/ADG709 SPECIFICATIONS
VDD = 5 V ± 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.
Table 1. B Version C Version −40°C to −40°C to −40°C to −40°C to Test Conditions/ Parameter +25°C +85°C +125°C +25°C +85°C +125°C Unit Comments
ANALOG SWITCH Analog Signal Range 0 V to 0 V to 0 V to V VDD VDD VDD On Resistance (RON) 3 3 Ω typ VS = 0 V to VDD, IDS = 10 mA; see Figure 20 4.5 5 7 4.5 5 7 Ω max On Resistance Match 0.4 0.4 Ω typ Between Channels (ΔRON) 0.8 1.5 0.8 1.5 Ω max VS = 0 V to VDD, IDS = 10 mA On Resistance Flatness 0.75 0.75 Ω typ VS = 0 V to VDD, IDS = 10 mA (RFLAT (ON)) 1.2 1.65 1.2 1.65 Ω max LEAKAGE CURRENTS VDD = 5.5 V Source Off Leakage, IS (Off) ±0.01 ±0.01 nA typ VD = 4.5 V/1 V, VS = 1 V/4.5 V; see Figure 21 ±20 ±20 ±0.1 ±0.3 ±1 nA max Drain Off Leakage, ID (Off) ±0.01 ±0.01 nA typ VD = 4.5 V/1 V, VS = 1 V/4.5 V; see Figure 22 ±20 ±20 ±0.1 ±0.75 ±6 nA max Channel On Leakage, ID, IS (On) ±0.01 ±0.01 nA typ VD = VS = 1 V or 4.5 V; see Figure 23 ±20 ±20 ±0.1 ±0.75 ±6 nA max DIGITAL INPUTS Input High Voltage, VINH 2.4 2.4 V min Input Low Voltage, VINL 0.8 0.8 V max Input Current IINL or IINH 0.005 0.005 μA typ VIN = VINL or VINH ±0.1 ±0.1 μA max Digital Input Capacitance, CIN 2 2 pF typ DYNAMIC CHARACTERISTICS1 tTRANSITION 14 14 ns typ RL = 300 Ω, CL = 35 pF; see Figure 24 25 25 25 25 ns max VS1 = 3 V/0 V, VS8 = 0 V/3 V Break-Before-Make Time 8 8 ns typ RL = 300 Ω, CL = 35 pF Delay, tOPEN 1 1 1 1 ns min VS = 3 V; see Figure 25 tON (EN) 14 14 ns typ RL = 300 Ω, CL = 35 pF 25 25 25 25 ns max VS = 3 V; see Figure 26 tOFF (EN) 7 7 ns typ RL = 300 Ω, CL = 35 pF 12 12 12 12 ns max VS = 3 V; see Figure 26 Charge Injection ±3 ±3 pC typ VS = 2.5 V, RS = 0 Ω, CL = 1 nF; See Figure 27 Off Isolation −60 −60 dB typ RL = 50 Ω, CL = 5 pF, f = 10 MHz −80 −80 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 28 Rev. E | Page 3 of 20 Document Outline Features Applications General Description Functional Block Diagrams Product Highlights Table of Contents Revision History Specifications Dual Supply Absolute Maximum Ratings ESD Caution Pin Configurations and Function Descriptions Truth Tables Typical Performance Characteristics Test Circuits Terminology Applications Information Power Supply Sequencing Outline Dimensions Ordering Guide Automotive Products
Data Sheet ADG708/ADG709 SPECIFICATIONS
VDD = 5 V ± 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.
Table 1. B Version C Version −40°C to −40°C to −40°C to −40°C to Test Conditions/ Parameter +25°C +85°C +125°C +25°C +85°C +125°C Unit Comments
ANALOG SWITCH Analog Signal Range 0 V to 0 V to 0 V to V VDD VDD VDD On Resistance (RON) 3 3 Ω typ VS = 0 V to VDD, IDS = 10 mA; see Figure 20 4.5 5 7 4.5 5 7 Ω max On Resistance Match 0.4 0.4 Ω typ Between Channels (ΔRON) 0.8 1.5 0.8 1.5 Ω max VS = 0 V to VDD, IDS = 10 mA On Resistance Flatness 0.75 0.75 Ω typ VS = 0 V to VDD, IDS = 10 mA (RFLAT (ON)) 1.2 1.65 1.2 1.65 Ω max LEAKAGE CURRENTS VDD = 5.5 V Source Off Leakage, IS (Off) ±0.01 ±0.01 nA typ VD = 4.5 V/1 V, VS = 1 V/4.5 V; see Figure 21 ±20 ±20 ±0.1 ±0.3 ±1 nA max Drain Off Leakage, ID (Off) ±0.01 ±0.01 nA typ VD = 4.5 V/1 V, VS = 1 V/4.5 V; see Figure 22 ±20 ±20 ±0.1 ±0.75 ±6 nA max Channel On Leakage, ID, IS (On) ±0.01 ±0.01 nA typ VD = VS = 1 V or 4.5 V; see Figure 23 ±20 ±20 ±0.1 ±0.75 ±6 nA max DIGITAL INPUTS Input High Voltage, VINH 2.4 2.4 V min Input Low Voltage, VINL 0.8 0.8 V max Input Current IINL or IINH 0.005 0.005 μA typ VIN = VINL or VINH ±0.1 ±0.1 μA max Digital Input Capacitance, CIN 2 2 pF typ DYNAMIC CHARACTERISTICS1 tTRANSITION 14 14 ns typ RL = 300 Ω, CL = 35 pF; see Figure 24 25 25 25 25 ns max VS1 = 3 V/0 V, VS8 = 0 V/3 V Break-Before-Make Time 8 8 ns typ RL = 300 Ω, CL = 35 pF Delay, tOPEN 1 1 1 1 ns min VS = 3 V; see Figure 25 tON (EN) 14 14 ns typ RL = 300 Ω, CL = 35 pF 25 25 25 25 ns max VS = 3 V; see Figure 26 tOFF (EN) 7 7 ns typ RL = 300 Ω, CL = 35 pF 12 12 12 12 ns max VS = 3 V; see Figure 26 Charge Injection ±3 ±3 pC typ VS = 2.5 V, RS = 0 Ω, CL = 1 nF; See Figure 27 Off Isolation −60 −60 dB typ RL = 50 Ω, CL = 5 pF, f = 10 MHz −80 −80 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 28 Rev. E | Page 3 of 20 Document Outline Features Applications General Description Functional Block Diagrams Product Highlights Table of Contents Revision History Specifications Dual Supply Absolute Maximum Ratings ESD Caution Pin Configurations and Function Descriptions Truth Tables Typical Performance Characteristics Test Circuits Terminology Applications Information Power Supply Sequencing Outline Dimensions Ordering Guide Automotive Products
