Datasheet UF3C065080B7S (UnitedSiC) - 2

Maximum Ratings Parameter Symbol Test Conditions Value Units Drain-source voltage VDS 650 V Gate-source voltage VGS DC -25 to +25 V TC = 25°C 27 A Continuous drain current 1 ID TC = 100°C 20 A Pulsed drain current 2 IDM TC = 25°C 65 A Single pulsed avalanche energy 3 EAS L=15mH, IAS =2.1A 33 mJ Power dissipation Ptot TC = 25°C 136.4 W Maximum junction temperature TJ,max 175 °C Operating and storage temperature TJ, TSTG -55 to 175 °C Reflow soldering temperature Tsolder reflow MSL 3 260 °C 1. Limited by TJ,max 2. Pulse width tp limited by TJ,max 3. Starting TJ = 25°C Thermal Characteristics Value Parameter Symbol Test Conditions Units Min Typ Max Thermal resistance, junction-to-case Rq 0.83 1.1 °C/W JC Datasheet: UF3C065080B7S Rev. A, November 2020 2