Datasheet NXH010P120MNF1PTNG, NXH010P120MNF1PNG (ON Semiconductor) - 4
| Manufacturer | ON Semiconductor |
| Description | F1-2PACK SiC MOSFET Module |
| Pages / Page | 12 / 4 — NXH010P120MNF1PTNG, NXH010P120MNF1PNG. ELECTRICAL CHARACTERISTICS. … |
| Revision | P2 |
| File Format / Size | PDF / 2.2 Mb |
| Document Language | English |
NXH010P120MNF1PTNG, NXH010P120MNF1PNG. ELECTRICAL CHARACTERISTICS. Parameter. Test Conditions. Symbol. Min. Typ. Max. Unit
Model Line for this Datasheet
Text Version of Document
NXH010P120MNF1PTNG, NXH010P120MNF1PNG ELECTRICAL CHARACTERISTICS
(continued) TJ = 25°C unless otherwise noted
Parameter Test Conditions Symbol Min Typ Max Unit SiC MOSFET CHARACTERISTICS
Total Gate Charge VDS = 800 V. VGS = 20 V. QG(TOTAL) – 454 – nC ID = 100 A Gate−Source Charge QGS – 129 – nC Gate−Drain Charge QGD – 131 – nC Turn−on Delay Time TJ = 25°C td(on) – 44.2 – ns VDS = 600 V, ID = 100 A Rise Time V tr – 16.2 – GS = −5V/18V, RG = 2 W Turn−off Delay Time td(off) – 136.6 – Fall Time tf – 9.8 – Turn−on Switching Loss per Pulse EON – 0.95 – mJ Turn off Switching Loss per Pulse EOFF – 0.72 – Turn−on Delay Time TJ = 150°C td(on) – 40.2 – ns VDS = 600 V, ID = 100 A Rise Time V tr – 14.9 – GS = −5V/18V, RG = 2 W Turn−off Delay Time td(off) – 150.3 – Fall Time tf – 12.7 – Turn−on Switching Loss per Pulse EON – 1.1 – mJ Turn off Switching Loss per Pulse EOFF – 0.81 – Diode Forward Voltage ID = 100 A
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TJ = 25°C VSD – 3.94 6 V ID = 100 A
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TJ = 150°C – 3.42 – Reverse Recovery Time TJ = 25°C trr – 24.2 – ns VDS = 600 V, ID = 100 A Reverse Recovery Charge Qrr – 1207 – nC VGS = −5V/18V, RG = 2 W Peak Reverse Recovery Current IRRM – 79.8 – A Peak Rate of Fall of Recovery Current di/dt – 7570 – A/ms Reverse Recovery Energy Err – 516 – mJ Reverse Recovery Time TJ = 150°C trr – 31.2 – ns VDS = 600 V, ID = 100 A Reverse Recovery Charge Qrr – 2591 – mC VGS = −5V/18V, RG = 2 W Peak Reverse Recovery Current IRRM – 134.2 – A Peak Rate of Fall of Recovery Current di/dt – 11849 – A/ms Reverse Recovery Energy Err – 1198 – mJ Thermal Resistance − chip−to−case M1,M2 RthJC – 0.23 – °C/W Thermal Resistance − chip−to−heatsink Thermal Resistance − chip−to− RthJH – 0.38 – °C/W heatsink, Thermal grease, Thickness = 2 Mil _2%, A = 2.8 W/mK
THERMISTOR CHARACTERISTICS
Nominal resistance T = 25°C R25 – 5 – kW Nominal resistance T = 100°C R100 – 457 – W Deviation of R25 ΔR/R −3 – 3 % Power dissipation PD – 50 – mW Power dissipation constant – 5 – mW/K B−value B(25/50), tolerance ±3% – 3375 – K B−value B(25/100), tolerance ±3% – 3455 – K
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(continued) TJ = 25°C unless otherwise noted
Parameter Test Conditions Symbol Min Typ Max Unit SiC MOSFET CHARACTERISTICS
Total Gate Charge VDS = 800 V. VGS = 20 V. QG(TOTAL) – 454 – nC ID = 100 A Gate−Source Charge QGS – 129 – nC Gate−Drain Charge QGD – 131 – nC Turn−on Delay Time TJ = 25°C td(on) – 44.2 – ns VDS = 600 V, ID = 100 A Rise Time V tr – 16.2 – GS = −5V/18V, RG = 2 W Turn−off Delay Time td(off) – 136.6 – Fall Time tf – 9.8 – Turn−on Switching Loss per Pulse EON – 0.95 – mJ Turn off Switching Loss per Pulse EOFF – 0.72 – Turn−on Delay Time TJ = 150°C td(on) – 40.2 – ns VDS = 600 V, ID = 100 A Rise Time V tr – 14.9 – GS = −5V/18V, RG = 2 W Turn−off Delay Time td(off) – 150.3 – Fall Time tf – 12.7 – Turn−on Switching Loss per Pulse EON – 1.1 – mJ Turn off Switching Loss per Pulse EOFF – 0.81 – Diode Forward Voltage ID = 100 A
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TJ = 25°C VSD – 3.94 6 V ID = 100 A
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TJ = 150°C – 3.42 – Reverse Recovery Time TJ = 25°C trr – 24.2 – ns VDS = 600 V, ID = 100 A Reverse Recovery Charge Qrr – 1207 – nC VGS = −5V/18V, RG = 2 W Peak Reverse Recovery Current IRRM – 79.8 – A Peak Rate of Fall of Recovery Current di/dt – 7570 – A/ms Reverse Recovery Energy Err – 516 – mJ Reverse Recovery Time TJ = 150°C trr – 31.2 – ns VDS = 600 V, ID = 100 A Reverse Recovery Charge Qrr – 2591 – mC VGS = −5V/18V, RG = 2 W Peak Reverse Recovery Current IRRM – 134.2 – A Peak Rate of Fall of Recovery Current di/dt – 11849 – A/ms Reverse Recovery Energy Err – 1198 – mJ Thermal Resistance − chip−to−case M1,M2 RthJC – 0.23 – °C/W Thermal Resistance − chip−to−heatsink Thermal Resistance − chip−to− RthJH – 0.38 – °C/W heatsink, Thermal grease, Thickness = 2 Mil _2%, A = 2.8 W/mK
THERMISTOR CHARACTERISTICS
Nominal resistance T = 25°C R25 – 5 – kW Nominal resistance T = 100°C R100 – 457 – W Deviation of R25 ΔR/R −3 – 3 % Power dissipation PD – 50 – mW Power dissipation constant – 5 – mW/K B−value B(25/50), tolerance ±3% – 3375 – K B−value B(25/100), tolerance ±3% – 3455 – K
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