Datasheet ZVP3306A (Diodes) - 2

P-CHANNEL ENHANCEMENT ZVP3306A MODE VERTICAL DMOS FET ZVP3306A ISSUE 2 – MARCH 94
TYPICAL CHARACTERISTICS
FEATURES * 6 0 Vo lt VDS -1.2 VGS V = GS -2 = 0 -2 V 0 VGS= * R -1.0 DS(on)=14Ω -1.0 -16V -16V ) -14V s -14V -0.8 -0.8 -12V -12V mps) D A G S t ( -0.6 nt (Amp -10V -10V n e -0.6 rr -9V -9V E-Line u -8V -0.4 C -8V -0.4 TO92 Compatible ni -7V -6V a -7V ABSOLUTE MAXIMUM RATINGS. r D -0.2 -0.2 -5V -6V - - Drain Curre -5V PARAMETER SYMBOL VALUE UNIT D I D -4V I -4.5V 0 0 Drain-Source Voltage VDS -60 V 0 -10 -20 -30 -40 -50 0 -2 -4 -6 -8 -10 Continuous Drain Current at Tamb=25°C ID -160 mA VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts) Pulsed Drain Current IDM -1.6 A
Output Characteristics Saturation Characteristics
Gate Source Voltage VGS ± 20 V Power Dissipation at Tamb=25°C Ptot 625 mW ) s Operating and Storage Temperature Range T -10 -1.0 j:Tstg -55 to +150 °C ) ts ol V -8 -0.8 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). e ( VDS=-10V ID= PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. ltag -6 urrent (Amp -400mA -0.6 o C Drain-Source Breakdown BV V DSS -60 V ID=-1mA, VGS=0V ain r Voltage -4 -0.4 e Dt Gate-Source Threshold VGS(th) -1.5 -3.5 V ID=-1mA, VDS= VGS Source -2 -200mA -0.2 Voltage in Dra On-Sta- Gate-Body Leakage I ) GSS 20 nA VGS=± 20V, VDS=0V 0 -100mA n DS- 0 V O 0 -2 -4 -6 -8 -10 D( 0 -2 -4 -6 -8 -10 Zero Gate Voltage Drain IDSS -0.5 µA VDS=-60 V, VGS=0 I Current -50 µA VDS=-48 V, VGS=0V, T=125°C(2) VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts) On-State Drain Current(1) ID(on) -400 mA VDS=-18 V, VGS=-10V
Transfer Characteristics Voltage Saturation Characteristics
Static Drain-Source On-State RDS(on) 14 Ω VGS=-10V,ID=-200mA Resistance (1) (Ω Forward Transconductance gfs 60 mS VDS=-18V,ID=-200mA 2.6 ce 100 ) (1)(2) h VGS=-5V t 2.4 -6V VGS=-10V S( -7V G 2.2 ID=0.37A Input Capacitance (2) Ciss 50 pF sistan e 2.0 R nd V
on)
Common Source Output Coss 25 pF VDS=-18V, VGS=0V, f=1MHz n a -10V 1.8 Capacitance (2) O
nce RDS(
-15V 1.6 ce 10
esista
DS(on) Reverse Transfer C
e R
rss 8 pF ur R 1.4 -20V d Capacitance (2) So e 1.2 s
n-Sourc ai
VGS=VDS 1.0
Dr
ID=-1mA Turn-On Delay Time (2)(3) t rain ali d(on) 8 ns
Gate
m
Threshol
0.8
d Voltage VGS(T
)-D
H)
Rise Time (2)(3) tr 8 ns Nor 0.6 V 1 DD ≈-18V, ID=-200mA -10 -100 -1000 -40 -20 0 20 40 60 80 100 120 140 160 S(on 180 Turn-Off Delay Time (2)(3) td(off) 8 ns D R Fall Time (2)(3) t ID-Drain Current (mA) Junction Temperature (°C) f 8 ns (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
On-resistance vs Drain Current Normalised RDS(on) and VGS(th) vs Temperature
(2) Sample test. ( 3-430 3-429 3 ) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator