Datasheet IRF540 (Vishay) - 5
| Manufacturer | Vishay |
| Description | Power MOSFET |
| Pages / Page | 8 / 5 — IRF540. Fig. 11 - Maximum Effective Transient Thermal Impedance, … |
| File Format / Size | PDF / 155 Kb |
| Document Language | English |
IRF540. Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Text Version of Document
IRF540
www.vishay.com Vishay Siliconix 10 ) thJC 1 0 − 0.5 PDM 0.2 0.1 0.1 t1 mal Response (Z t 0.05 2 Ther Notes: 0.02 Single Pulse 1. Duty Factor, D = t /t 0.01 (Thermal Response) 1 2 2. Peak T = P x Z + T j DM thJC C 10-2 10-5 10-4 10-3 10-2 0.1 1 10 91021_11 t1, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
L VDS VDS Vary t t p to obtain p required IAS VDD R D.U.T G + V - DD V I DS AS 10 V t 0.01 p Ω IAS
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms
600 ID Top 11 A 500 20 A Bottom 28 A 400 300 200 , Single Pulse Energy (mJ) 100 ASE V = 25 V DD 0 25 50 75 100 125 150 175 91021_12c Starting TJ, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
S21-0819-Rev. C, 02-Aug-2021
5
Document Number: 91021 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix 10 ) thJC 1 0 − 0.5 PDM 0.2 0.1 0.1 t1 mal Response (Z t 0.05 2 Ther Notes: 0.02 Single Pulse 1. Duty Factor, D = t /t 0.01 (Thermal Response) 1 2 2. Peak T = P x Z + T j DM thJC C 10-2 10-5 10-4 10-3 10-2 0.1 1 10 91021_11 t1, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
L VDS VDS Vary t t p to obtain p required IAS VDD R D.U.T G + V - DD V I DS AS 10 V t 0.01 p Ω IAS
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms
600 ID Top 11 A 500 20 A Bottom 28 A 400 300 200 , Single Pulse Energy (mJ) 100 ASE V = 25 V DD 0 25 50 75 100 125 150 175 91021_12c Starting TJ, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
S21-0819-Rev. C, 02-Aug-2021
5
Document Number: 91021 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
