Datasheet N-Channel 60-V (D-S) MOSFET (Vishay) - 6
| Manufacturer | Vishay |
| Description | P-Channel 80 V (D-S) MOSFET |
| Pages / Page | 10 / 6 — Si2337DS. TYPICAL CHARACTERISTICS. Normalized Thermal Transient … |
| File Format / Size | PDF / 226 Kb |
| Document Language | English |
Si2337DS. TYPICAL CHARACTERISTICS. Normalized Thermal Transient Impedance, Junction-to-Ambient
Model Line for this Datasheet
Text Version of Document
Si2337DS
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) 2 1 Duty Cycle = 0.5 t n eisn e a c r n 0.2 T a e d Notes: v e it p c m 0.1 e I f PDM f l 0.1 E a d mr 0.05 e e t z 1 il h t a T 2 0.02 t1 m 1. Duty Cycle, D = r t o 2 2. Per Unit Base = R N thJA = 166 °C/W 3. T (t) JM - T A = PDMZthJA Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1 t n Duty Cycle = 0.5 eisn e a c r n T a e d v e it p c m e I f f l a 0.2 E d mr 0.1 e e 0.1 zil h a T m 0.05 r o N 0.02 Single Pulse 0.01 10-3 10-2 10-1 10-4 1 Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73533. S19-0386-Rev. F, 20-May-2019
6
Document Number: 73533 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) 2 1 Duty Cycle = 0.5 t n eisn e a c r n 0.2 T a e d Notes: v e it p c m 0.1 e I f PDM f l 0.1 E a d mr 0.05 e e t z 1 il h t a T 2 0.02 t1 m 1. Duty Cycle, D = r t o 2 2. Per Unit Base = R N thJA = 166 °C/W 3. T (t) JM - T A = PDMZthJA Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1 t n Duty Cycle = 0.5 eisn e a c r n T a e d v e it p c m e I f f l a 0.2 E d mr 0.1 e e 0.1 zil h a T m 0.05 r o N 0.02 Single Pulse 0.01 10-3 10-2 10-1 10-4 1 Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73533. S19-0386-Rev. F, 20-May-2019
6
Document Number: 73533 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
