Datasheet IRLZ44 (Vishay)
| Manufacturer | Vishay |
| Description | Power MOSFET |
| Pages / Page | 9 / 1 — IRLZ44. Power MOSFET. FEATURES. TO-220AB. Note. PRODUCT SUMMARY. … |
| File Format / Size | PDF / 901 Kb |
| Document Language | English |
IRLZ44. Power MOSFET. FEATURES. TO-220AB. Note. PRODUCT SUMMARY. DESCRIPTION. ORDERING INFORMATION. ABSOLUTE MAXIMUM RATINGS
Model Line for this Datasheet
Text Version of Document
IRLZ44
www.vishay.com Vishay Siliconix
Power MOSFET FEATURES
D • Dynamic dV/dt rating
TO-220AB
• Logic-level gate drive Available • RDS(on) specified at VGS = 4 V and 5 V Available • 175 °C operating temperature G • Fast switching • Ease of paralleling S • Simple drive requirements D G S • Material categorization: for definitions of compliance N-Channel MOSFET please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For
PRODUCT SUMMARY
example, parts with lead (Pb) terminations are not RoHS-compliant. V Please see the information / tables in this datasheet for details DS (V) 60 RDS(on) (Ω) VGS = 5.0 V 0.028
DESCRIPTION
Qg (Max.) (nC) 66 Third generation power MOSFETs from Vishay provide the Qgs (nC) 12 designer with the best combination of fast switching, Qgd (nC) 43 ruggedized device design, low on-resistance and Configuration Single cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
ORDERING INFORMATION
Package TO-220AB Lead (Pb)-free IRLZ44PbF Lead (Pb)-free and halogen-free IRLZ44PbF-BE3
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS 60 V Gate-source voltage VGS ± 10 TC = 25 °C 50 Continuous drain current VGS at 5 V ID TC = 100 °C 36 A Pulsed drain current a IDM 200 Linear derating factor 1.0 W/°C Single pulse avalanche energy b EAS 400 mJ Maximum power dissipation TC = 25 °C PD 150 W Peak diode recovery dV/dt c dV/dt 4.5 V/ns Operating junction and storage temperature range TJ, Tstg -55 to +175 °C Soldering recommendations (peak temperature) d For 10 s 300 10 lbf · in Mounting torque 6-32 or M3 screw 1.1 N · m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = 25 V, starting TJ = 25 °C, L = 179 μH, Rg = 25 Ω, IAS = 51 A (see fig. 12) c. ISD ≤ 51 A, dV/dt ≤ 250 A/s, VDD ≤ VDS, TJ ≤ 175 °C d. 1.6 mm from case e. Current limited by the package, (die current = 51 A) S21-1045-Rev. D, 25-Oct-2021
1
Document Number: 91328 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
Power MOSFET FEATURES
D • Dynamic dV/dt rating
TO-220AB
• Logic-level gate drive Available • RDS(on) specified at VGS = 4 V and 5 V Available • 175 °C operating temperature G • Fast switching • Ease of paralleling S • Simple drive requirements D G S • Material categorization: for definitions of compliance N-Channel MOSFET please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For
PRODUCT SUMMARY
example, parts with lead (Pb) terminations are not RoHS-compliant. V Please see the information / tables in this datasheet for details DS (V) 60 RDS(on) (Ω) VGS = 5.0 V 0.028
DESCRIPTION
Qg (Max.) (nC) 66 Third generation power MOSFETs from Vishay provide the Qgs (nC) 12 designer with the best combination of fast switching, Qgd (nC) 43 ruggedized device design, low on-resistance and Configuration Single cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
ORDERING INFORMATION
Package TO-220AB Lead (Pb)-free IRLZ44PbF Lead (Pb)-free and halogen-free IRLZ44PbF-BE3
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS 60 V Gate-source voltage VGS ± 10 TC = 25 °C 50 Continuous drain current VGS at 5 V ID TC = 100 °C 36 A Pulsed drain current a IDM 200 Linear derating factor 1.0 W/°C Single pulse avalanche energy b EAS 400 mJ Maximum power dissipation TC = 25 °C PD 150 W Peak diode recovery dV/dt c dV/dt 4.5 V/ns Operating junction and storage temperature range TJ, Tstg -55 to +175 °C Soldering recommendations (peak temperature) d For 10 s 300 10 lbf · in Mounting torque 6-32 or M3 screw 1.1 N · m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = 25 V, starting TJ = 25 °C, L = 179 μH, Rg = 25 Ω, IAS = 51 A (see fig. 12) c. ISD ≤ 51 A, dV/dt ≤ 250 A/s, VDD ≤ VDS, TJ ≤ 175 °C d. 1.6 mm from case e. Current limited by the package, (die current = 51 A) S21-1045-Rev. D, 25-Oct-2021
1
Document Number: 91328 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
