Datasheet CBR2-D020S (Central Semiconductor)
| Manufacturer | Central Semiconductor |
| Description | SURFACE MOUNT SILICON 2.0 AMP BRIDGE RECTIFIERS |
| Pages / Page | 3 / 1 — CBR2-D020S SERIES. SURFACE MOUNT SILICON. www.centra lsemi.com. 2.0 AMP. … |
| File Format / Size | PDF / 355 Kb |
| Document Language | English |
CBR2-D020S SERIES. SURFACE MOUNT SILICON. www.centra lsemi.com. 2.0 AMP. DESCRIPTION:. BRIDGE RECTIFIERS. MARKING: FULL PART NUMBER
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CBR2-D020S SERIES SURFACE MOUNT SILICON www.centra lsemi.com 2.0 AMP DESCRIPTION: BRIDGE RECTIFIERS
The CENTRAL SEMICONDUCTOR CBR2-D020S series devices are silicon full wave bridge rectifiers mounted in a durable epoxy surface mount molded case, utilizing glass passivated chips.
MARKING: FULL PART NUMBER SMDIP CASE MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
CBR2 CBR2 CBR2 CBR2 CBR2 SYMBOL -D020S -D040S -D060S -D080S -D100S UNITS
Peak Repetitive Reverse Voltage VRRM 200 400 600 800 1000 V DC Blocking Voltage VR 200 400 600 800 1000 V RMS Reverse Voltage VR(RMS) 140 280 420 560 700 V Average Forward Current (TA=40°C) IO 2.0 A Peak Forward Surge Current (t=8.3ms) IFSM 60 A Peak Forward Surge Current (t=1.0ms) IFSM 65 A Rating for Fusing (t=8.3ms) I2t 10 A2s Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Typical Thermal Resistance (Note 1) JA 40 °C/W Typical Thermal Resistance JL 15 °C/W Note 1: Device mounted on PCB with 13mm x 13mm copper pads.
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS TYP MAX UNITS
IR VR=Rated VRRM 5.0 µA IR VR=Rated VRRM, TA=125°C 0.5 mA VF IF=2.0A 1.1 V CJ VR=4.0V, f=1.0MHz 25 pF R2 (11-May 2018)
The CENTRAL SEMICONDUCTOR CBR2-D020S series devices are silicon full wave bridge rectifiers mounted in a durable epoxy surface mount molded case, utilizing glass passivated chips.
MARKING: FULL PART NUMBER SMDIP CASE MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
CBR2 CBR2 CBR2 CBR2 CBR2 SYMBOL -D020S -D040S -D060S -D080S -D100S UNITS
Peak Repetitive Reverse Voltage VRRM 200 400 600 800 1000 V DC Blocking Voltage VR 200 400 600 800 1000 V RMS Reverse Voltage VR(RMS) 140 280 420 560 700 V Average Forward Current (TA=40°C) IO 2.0 A Peak Forward Surge Current (t=8.3ms) IFSM 60 A Peak Forward Surge Current (t=1.0ms) IFSM 65 A Rating for Fusing (t=8.3ms) I2t 10 A2s Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Typical Thermal Resistance (Note 1) JA 40 °C/W Typical Thermal Resistance JL 15 °C/W Note 1: Device mounted on PCB with 13mm x 13mm copper pads.
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS TYP MAX UNITS
IR VR=Rated VRRM 5.0 µA IR VR=Rated VRRM, TA=125°C 0.5 mA VF IF=2.0A 1.1 V CJ VR=4.0V, f=1.0MHz 25 pF R2 (11-May 2018)
