Datasheet CPD73 (Central Semiconductor)
| Manufacturer | Central Semiconductor |
| Description | Bridge Rectifier Monolithic Quad Diode Bridge Chip |
| Pages / Page | 9 / 1 — PROCESS. Monolithic Quad Diode Bridge Chip. PROCESS DETAILS. GEOMETRY. … |
| File Format / Size | PDF / 709 Kb |
| Document Language | English |
PROCESS. Monolithic Quad Diode Bridge Chip. PROCESS DETAILS. GEOMETRY. GROSS DIE PER 3 INCH WAFER. PRINCIPAL DEVICE TYPES
Model Line for this Datasheet
Text Version of Document
PROCESS
CPD73 Bridge Rectifier
Monolithic Quad Diode Bridge Chip PROCESS DETAILS
Die Size 25 x 25 MILS Die Thickness 6.0 MILS Bonding Pad Area 1 (+DC) 3.0 x 3.0 MILS Bonding Pad Area 2 (AC) 3.0 x 7.0 MILS Bonding Pad Area 3 (-DC) 3.0 x 4.0 MILS Bonding Pad Area 4 (AC) 3.0 x 7.0 MILS Top Side Metalization Al - 12,000Å Back Side Metalization Au - 5,000Å
GEOMETRY GROSS DIE PER 3 INCH WAFER
10,000
PRINCIPAL DEVICE TYPES
CMFBR-6F R2 (22-March 2010)
w w w. c e n t r a l s e m i . c o m
CPD73 Bridge Rectifier
Monolithic Quad Diode Bridge Chip PROCESS DETAILS
Die Size 25 x 25 MILS Die Thickness 6.0 MILS Bonding Pad Area 1 (+DC) 3.0 x 3.0 MILS Bonding Pad Area 2 (AC) 3.0 x 7.0 MILS Bonding Pad Area 3 (-DC) 3.0 x 4.0 MILS Bonding Pad Area 4 (AC) 3.0 x 7.0 MILS Top Side Metalization Al - 12,000Å Back Side Metalization Au - 5,000Å
GEOMETRY GROSS DIE PER 3 INCH WAFER
10,000
PRINCIPAL DEVICE TYPES
CMFBR-6F R2 (22-March 2010)
w w w. c e n t r a l s e m i . c o m
