Datasheet 3N254-M (Central Semiconductor)

3N254-M SERIES w w w. c e n t r a l s e m i . c o m SILICON BRIDGE RECTIFIERS DESCRIPTION:
The CENTRAL SEMICONDUCTOR 3N254-M series types are silicon single phase, full wave bridge rectifiers designed for general purpose applications.
MARKING: FULL PART NUMBER CASE B-M MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
3N 3N 3N 3N 3N 3N SYMBOL 254-M 255-M 256-M 257-M 258-M 259-M UNITS
Peak Repetitive Reverse Voltage VRRM 100 200 400 600 800 1000 V DC Blocking Voltage VR 100 200 400 600 800 1000 V RMS Reverse Voltage VR(RMS) 70 140 280 420 560 700 V Average Forward Current (TA=55°C) IO 2.0 A Peak Forward Surge Current IFSM 55 A Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
IR VR=Rated VRRM 10 μA VF IF=3.14A 1.1 V R3 (25-February 2013)