Preliminary Datasheet EPC2302 (Efficient Power Conversion)

eGaN® FET DATASHEET
EPC2302
EPC2302 – Enhancement Mode Power Transistor D
VDS , 100 V R
G EFFICIENT POWER CONVERSION
DS(on) , 1.8 mΩ max
PRELIMINARY S HAL General Description
The EPC2302 is a 1.8 mΩ max RDS(on), 100 V eGaN® power transistor in a low inductance 3 x 5 mm QFN package with exposed top for excel ent thermal management. It is tailored to high frequency DC-DC
EPC2302
applications to/from 40 V–60 V and 48 V BLDC motor drives.
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The thermal resistance to case top is ~0.2 °C/W, resulting in excel ent thermal behavior and easy cooling. The device features an enhanced PQFN “Thermal-Max” package. The exposed top enhances
EPC2302
top-side thermal management and the side-wettable flanks guarantee that the complete side-pad Package size: 3 x 5 mm surface is wetted with solder during the reflow soldering process, which protects the copper and al ows soldering to occur on this external flank area for easy optical inspection.
Features
• 100 V Compared to a Si MOSFET, the footprint of 15 mm2 is less than half of the size of the best-in-class Si • 1.4 mΩ typical, 1.8 mΩ max RDS(on) MOSFET with similar Rds(on) and voltage rating, QG and QGD are significantly smaller and QRR is 0. • 3 x 5 mm QFN package This results in lower switching losses and lower gate driver losses. Moreover, EPC2302 is very fast • Exposed top for top-side thermal management and can operate with deadtime less than 10 ns for higher efficiency and QRR = 0 is a big advantage • Moisture rating MSL2 for reliability and EMI. In summary, EPC2302 al ows the highest power density due to enhanced • Enhanced Thermal-Max package efficiency, smaller size, and higher switching frequency for smaller inductor and fewer capacitors. The EPC2302 enables designers to improve efficiency and save space. The excel ent thermal behavior
Applications
enables easier and lower cost cooling. The ultra-low capacitance and zero reverse recovery of the • AC-DC chargers, SMPS, adaptors, power supplies eGaN® FET enables efficient operation in many topologies. Performance is further enhanced due to • High Frequency DC-DC Conversion up to 80 V the smal , low inductance footprint. input (Buck, Boost, Buck-Boost and LLC) • 24 V–60 V Motor Drives
Application notes:
• High Power Density DC-DC modules from • Easy-to-use and reliable gate, Gate Drive ON = 5 V typical, OFF = 0 V (negative voltage not needed) 40 V– 60 V to 5 V–12 V • Top of FET is electrical y connected to source • Synchronous Rectification • Questions:
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• Solar MPPT
Benefits Maximum Ratings
• Ultra High Efficiency
PARAMETER VALUE UNIT
• No Reverse Recovery VDS Drain-to-Source Voltage (Continuous) 100 • Ultra Low QG V Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150 °C) 120 • Small Footprint Continuous (TA = 25°C) 101 • Excellent Thermal ID A Pulsed (25°C, TPULSE = 300 µs) 408 Gate-to-Source Voltage 6 VGS V Gate-to-Source Voltage -4 TJ Operating Temperature –40 to 150 °C TSTG Storage Temperature –40 to 150 EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2021 | | 1