Datasheet 2N3019, 2N3020 (Comset Semiconductors)

NPN 2N3019 – 2N3020
SILICON PLANAR EPITAXIAL TRANSISTORS
The 2N3019 and 2N3020 are NPN transistors mounted in TO-39 metal case .
They are intended for high-current, high-frequency amplifier applications.
They feature high gain and low saturation voltages.
Compliance to RoHS ABSOLUTE MAXIMUM RATINGS
Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current PD Total Power Dissipation @ Tamb = 25° PD Total Power Dissipation @ Tcase= 25° TJ Junction Temperature TStg Storage Temperature range 2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020 Value Unit 80 V 140 V 7 V 1 A 0.8
Watts
5
200 °C -65 to +200 °C Value Unit 35 °C/W 219 °C/W THERMAL CHARACTERISTICS
Symbol Ratings RthJ-a Thermal Resistance, Junction to ambient in free
air RthJ-c Thermal Resistance, Junction to case COMSET SEMICONDUCTORS 2N3019
2N3020
2N3019
2N3020 1/4