Datasheet RB520S30 (Nexperia) - 8
| Manufacturer | Nexperia |
| Description | 200 mA low VF MEGA Schottky barrier rectifier |
| Pages / Page | 12 / 8 — Nexperia. RB520S30. 200 mA low VF MEGA Schottky barrier rectifier. 11. … |
| Revision | 07042021 |
| File Format / Size | PDF / 246 Kb |
| Document Language | English |
Nexperia. RB520S30. 200 mA low VF MEGA Schottky barrier rectifier. 11. Test information
Model Line for this Datasheet
Text Version of Document
Nexperia RB520S30 200 mA low VF MEGA Schottky barrier rectifier 11. Test information
tr tp t D.U.T. 10 % + I R F trr S = 50 Ω IF SAMPLING t OSCILLOSCOPE V = VR + IF × RS Ri = 50 Ω (1) 90 % VR mga881 input signal output signal (1) IR = 1 mA Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle δ = 0.05 Oscilloscope rise time tr = 0.35 ns
Fig. 11. Reverse recovery time: test circuit and waveforms
t1 P duty cycle δ = t t 2 2 t1 t 006aaa812
Fig. 12. Duty cycle definition
The current ratings for the typical waveforms are calculated according to the equations: IF(AV) = IM × δ with IM defined as peak current, IRMS = IF(AV) at DC, and IRMS = IM × √δ with IRMS defined as RMS current.
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. RB520S30 All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2021. Al rights reserved
Product data sheet 7 April 2021 8 / 12
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information Contents
tr tp t D.U.T. 10 % + I R F trr S = 50 Ω IF SAMPLING t OSCILLOSCOPE V = VR + IF × RS Ri = 50 Ω (1) 90 % VR mga881 input signal output signal (1) IR = 1 mA Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle δ = 0.05 Oscilloscope rise time tr = 0.35 ns
Fig. 11. Reverse recovery time: test circuit and waveforms
t1 P duty cycle δ = t t 2 2 t1 t 006aaa812
Fig. 12. Duty cycle definition
The current ratings for the typical waveforms are calculated according to the equations: IF(AV) = IM × δ with IM defined as peak current, IRMS = IF(AV) at DC, and IRMS = IM × √δ with IRMS defined as RMS current.
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. RB520S30 All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2021. Al rights reserved
Product data sheet 7 April 2021 8 / 12
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information Contents
