STGAP2SiCD Datasheet Galvanically isolated 4 A dual gate driver Features • High voltage rail up to 1200 V • Driver current capability: 4 A sink/source @ 25 °C • dV/dt transient immunity ±100 V/ns • Overall input-output propagation delay: 75 ns • Separate sink and source option for easy gate driving configuration • 4 A Miller CLAMP • UVLO function • Configurable interlocking function • Dedicated SD and BRAKE pins • Gate driving voltage up to 26 V • 3.3 V, 5 V TTL/CMOS inputs with hysteresis • Temperature shutdown protection • Standby function • 6 kV galvanic isolation • Wide Body SO-36W Application • Motor driver for industrial drives, factory automation, home appliances and fans • 600/1200 V inverters • Battery chargers Product status link • Induction heating STGAP2SiCD • Welding Product label • UPS • Power supply units • DC-DC converters • Power Factor Correction Description The STGAP2SiCD is a dual gate driver for SiC MOSFETs which provides galvanic isolation between each gate driving channel and the low voltage control and interface circuitry. The gate driver is characterized by 4 A current capability and rail-to-rail outputs, making it suitable for mid and high power applications such as power conversion and industrial motor drivers inverters. The separated output pins allow to independently optimize turn-on and turn-off by using dedicated gate resistors, while the Miller CLAMP function allows avoiding gate spikes during fast commutations in half-bridge topologies. The device integrates protection functions: dedicated SD and BRAKE pins are available, UVLO and thermal shutdown are included to easily design high reliability systems. In half-bridge topologies the interlocking function prevents outputs from being high at the same time, avoiding shoot-through conditions in case of wrong logic input commands. The interlocking function can be disabled by a dedicated configuration pin, allowing independent and parallel operation of the two channels. The input to output propagation delay results are contained within 75 ns, providing high PWM control accuracy. A standby mode is available in order to reduce idle power consumption. DS13714 - Rev 1 - October 2021 www.st.com For further information contact your local STMicroelectronics sales office. Document Outline Cover image Product status link / summary Features Application Description 1 Block diagram 2 Pin description and connection diagram 3 Electrical data 3.1 Absolute maximum ratings 3.2 Thermal data 3.3 Recommended operating conditions 4 Electrical characteristics 5 Isolation 6 Functional description 6.1 Gate driving power supply and UVLO 6.2 Power-up, power-down and ‘safe state’ 6.3 Control Inputs 6.4 Watchdog 6.5 Thermal shutdown protection 6.6 Standby function 6.7 Interlocking function 7 Typical application diagram 8 Layout 8.1 Layout guidelines and considerations 8.2 Layout example 9 Testing and characterization information 10 Package information 10.1 SO-36W package information 11 Suggested land pattern 12 Ordering information Revision history Contents List of tables List of figures