Datasheet FDD6637 (Fairchild) - 5

FDD Typical Characteristics 663 7
10 3200
35 )
ID = -14A VDS = 10V f = 1MHz
V P- (V
30V VGS = 0 V 8
GE
2400
) F LTA
20V C
(p
iss
C VO
6
E E C h R ANC
1600
T a OU
4
nn -S ACI E P CA
Coss
GAT
800
e ,
2
l P GS -V
Crss
o
0 0
w
0 10 20 30 40 50 0 5 10 15 20 25 30
Q e g, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V) rTr Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics e n
1000 100
c ) h W
SINGLE PULSE
R (
Rθ ® JA = 96°C/W 100
)
100µs
E
80 TA = 25°C
A
1ms
W M (
R 10ms
PO
DS(ON) LIMIT
OS ENT
10 100ms
NT
60 1s
IE CURR
10s
ANS FET
40 1 DC
AIN TR
VGS = -10V
AK , DR E D
SINGLE PULSE
-I
20
), P
0.1 RθJA = 96oC/W
k
T
(p
A = 25oC
P
0 0.01 0.01 0.1 1 10 100 1000 0 0 1 10 100
t -V 1, TIME (sec) DS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation
100 1000
) (A
SINGLE PULSE R
NT
θJA = 96°C/W
T
80 TA = 25°C
EN RRE
TJ = 25oC 100
URR T CU
60
EN HE C SI AN ANC
40
AL TR
10
K A , AV E ) S
20
, P I (A I(pk)
0 1 0.01 0.1 1 10 100 1000 0.001 0.01 0.1 1 10
t t 1, TIME (sec) AV, TIME IN AVANCHE(ms) Figure 11. Single Pulse Maximum Peak Figure 12. Unclamped Inductive Current Switching Capability
FDD6637 Rev. C(W) www.fairchildsemi.com