Datasheet BUZ71 (STMicroelectronics) - 2
| Manufacturer | STMicroelectronics |
| Description | N - CHANNEL 50V - 0.085Ω - 17A TO-220 STripFET POWER MOSFET |
| Pages / Page | 8 / 2 — BUZ71. THERMAL DATA. AVALANCHE CHARACTERISTICS. Symbo l. Parameter. Valu … |
| File Format / Size | PDF / 89 Kb |
| Document Language | English |
BUZ71. THERMAL DATA. AVALANCHE CHARACTERISTICS. Symbo l. Parameter. Valu e. Unit. ELECTRICAL CHARACTERISTICS. Test Con ditions. Min. Typ. Max
Model Line for this Datasheet
Text Version of Document
BUZ71 THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 2.5 oC/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 oC/W
AVALANCHE CHARACTERISTICS Symbo l Parameter Valu e Unit
IAR Avalanche Current, Repetitive or Not-Repetitive 17 A (pulse width limited by Tj max) EAS Single Pulse Avalanche Energy 50 mJ (starting Tj = 25 oC, ID = IAR, VDD = 25 V)
ELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) OFF
Symbo l Parameter Test Con ditions Min. Typ. Max. Unit
V(BR)DSS Drain-source ID = 250 µA VGS = 0 50 V Breakdown Voltage IDSS Zero Gat e Voltage VDS = Max Rating 1 µA Drain Current (VGS = 0) VDS = Max Rating Tj = 125 oC 10 µA IGSS Gat e-body Leakage VGS = ± 20 V ± 100 nA Current (VDS = 0) ON (∗
) Symbo l Parameter Test Con ditions Min. Typ. Max. Unit
VGS(th) Gat e Threshold Voltage VDS = VGS ID = 1 mA 2. 1 3 4 V RDS(on) Static Drain-source On VGS = 10 V ID = 9 A 0.085 0. 1 Ω Resistance DYNAMIC
Symbo l Parameter Test Con ditions Min. Typ. Max. Unit
gfs (∗) Forward VDS = 25 V ID = 9 A 4 7.7 S Transconductance Ciss Input Capacitance VDS = 25 V f = 1 MHz VGS = 0 760 pF Coss Out put Capacitance 100 pF Crss Reverse Transfer 30 pF Capacitance SWITCHING
Symbo l Parameter Test Con ditions Min. Typ. Max. Unit
td(on) Turn-on Time VDD = 30 V ID = 8 A 20 ns tr Rise Time RGS = 50 Ω VGS = 10 V 65 ns td(off) Turn-off Delay T ime 70 ns tf Fall T ime 35 ns 2/8
Rthj-case Thermal Resistance Junction-case Max 2.5 oC/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 oC/W
AVALANCHE CHARACTERISTICS Symbo l Parameter Valu e Unit
IAR Avalanche Current, Repetitive or Not-Repetitive 17 A (pulse width limited by Tj max) EAS Single Pulse Avalanche Energy 50 mJ (starting Tj = 25 oC, ID = IAR, VDD = 25 V)
ELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) OFF
Symbo l Parameter Test Con ditions Min. Typ. Max. Unit
V(BR)DSS Drain-source ID = 250 µA VGS = 0 50 V Breakdown Voltage IDSS Zero Gat e Voltage VDS = Max Rating 1 µA Drain Current (VGS = 0) VDS = Max Rating Tj = 125 oC 10 µA IGSS Gat e-body Leakage VGS = ± 20 V ± 100 nA Current (VDS = 0) ON (∗
) Symbo l Parameter Test Con ditions Min. Typ. Max. Unit
VGS(th) Gat e Threshold Voltage VDS = VGS ID = 1 mA 2. 1 3 4 V RDS(on) Static Drain-source On VGS = 10 V ID = 9 A 0.085 0. 1 Ω Resistance DYNAMIC
Symbo l Parameter Test Con ditions Min. Typ. Max. Unit
gfs (∗) Forward VDS = 25 V ID = 9 A 4 7.7 S Transconductance Ciss Input Capacitance VDS = 25 V f = 1 MHz VGS = 0 760 pF Coss Out put Capacitance 100 pF Crss Reverse Transfer 30 pF Capacitance SWITCHING
Symbo l Parameter Test Con ditions Min. Typ. Max. Unit
td(on) Turn-on Time VDD = 30 V ID = 8 A 20 ns tr Rise Time RGS = 50 Ω VGS = 10 V 65 ns td(off) Turn-off Delay T ime 70 ns tf Fall T ime 35 ns 2/8
