Datasheet BUZ 171 (STMicroelectronics)

ManufacturerSTMicroelectronics
DescriptionSIPMOS Power Transistor
Pages / Page9 / 1 — BUZ 171. SIPMOS. Power Transistor. Pin 1. Pin 2. Pin 3. Type. VDS. …
File Format / SizePDF / 195 Kb
Document LanguageEnglish

BUZ 171. SIPMOS. Power Transistor. Pin 1. Pin 2. Pin 3. Type. VDS. RDS(on. Package. Ordering Code. Maximum Ratings. Parameter. Symbol. Values. Unit

Datasheet BUZ 171 STMicroelectronics

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BUZ 171 SIPMOS
®
Power Transistor
• P channel • Enhancement mode • Avalanche rated
Pin 1 Pin 2 Pin 3
G D S
Type VDS ID RDS(on
)
Package Ordering Code
BUZ 171 -50 V -8 A 0.3 Ω TO-220 AB C67078-S1450-A2
Maximum Ratings Parameter Symbol Values Unit
Continuous drain current ID A TC = 30 °C -8 Pulsed drain current IDpuls TC = 25 °C -32 Avalanche energy, single pulse EAS mJ ID = -8 A, VDD = -25 V, RGS = 25 Ω L = 1.1 mH, Tj = 25 °C 70 Gate source voltage VGS ± 20 V Power dissipation Ptot W TC = 25 °C 40 Operating temperature Tj -55 ... + 150 °C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case R ≤ thJC 3.1 K/W Thermal resistance, chip to ambient RthJA ≤ 75 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 Semiconductor Group 1 07/96