Datasheet CMPZ5235B - CMPZ5261B (Central Semiconductor)
| Manufacturer | Central Semiconductor |
| Description | 0.5 Watt Zener Diode Chip |
| Pages / Page | 10 / 1 — PROCESS. 0.5 Watt Zener Diode Chip. PROCESS DETAILS. GEOMETRY. GROSS DIE … |
| File Format / Size | PDF / 744 Kb |
| Document Language | English |
PROCESS. 0.5 Watt Zener Diode Chip. PROCESS DETAILS. GEOMETRY. GROSS DIE PER 4 INCH WAFER. PRINCIPAL DEVICE TYPES
Model Line for this Datasheet
Text Version of Document
PROCESS
CPZ19 Zener Diode
0.5 Watt Zener Diode Chip PROCESS DETAILS
Process EPITAXIAL PLANAR Die Size 17.7 x 17.7 MILS Die Thickness 7.5 MILS Anode Bonding Pad Area 11 x 11 MILS Top Side Metalization Al - 13,000Å Back Side Metalization Au - 14,000Å
GEOMETRY GROSS DIE PER 4 INCH WAFER
36,642
PRINCIPAL DEVICE TYPES
CMPZ5235B THRU CMPZ5261B BACKSIDE CATHODE R0 R6 (22-February 2012)
w w w. c e n t r a l s e m i . c o m
CPZ19 Zener Diode
0.5 Watt Zener Diode Chip PROCESS DETAILS
Process EPITAXIAL PLANAR Die Size 17.7 x 17.7 MILS Die Thickness 7.5 MILS Anode Bonding Pad Area 11 x 11 MILS Top Side Metalization Al - 13,000Å Back Side Metalization Au - 14,000Å
GEOMETRY GROSS DIE PER 4 INCH WAFER
36,642
PRINCIPAL DEVICE TYPES
CMPZ5235B THRU CMPZ5261B BACKSIDE CATHODE R0 R6 (22-February 2012)
w w w. c e n t r a l s e m i . c o m
