Datasheet ADG636 (Analog Devices) - 5

ManufacturerAnalog Devices
Description1 pC Charge Injection, 100 pA Leakage, CMOS, ±5 V/+5 V/+3 V Dual SPDT Switch
Pages / Page16 / 5 — ADG636. SINGLE SUPPLY. Table 2. Parameter. +25°C. −40°C to +85°C. −40°C …
RevisionB
File Format / SizePDF / 505 Kb
Document LanguageEnglish

ADG636. SINGLE SUPPLY. Table 2. Parameter. +25°C. −40°C to +85°C. −40°C to +125°C. Unit. Test Conditions/Comments

ADG636 SINGLE SUPPLY Table 2 Parameter +25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments

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ADG636 SINGLE SUPPLY
VDD = 5 V ± 10%, VSS = 0 V, GND = 0 V. All specifications −40°C to +125°C, unless otherwise noted.
Table 2. Parameter +25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH Analog Signal Range 0 V to VDD V VDD = 4.5 V, VSS = 0 V On Resistance, RON 210 Ω typ VS = 3.5 V, IDS = −1 mA, Figure 14 290 350 380 Ω max VS = 3.5 V, IDS = −1 mA, Figure 14 On Resistance Match Between Channels, ΔRON 3 Ω typ VS = 3.5 V, IDS = −1 mA 12 13 Ω max VS = 3.5 V, IDS = −1 mA LEAKAGE CURRENTS VDD = 5.5 V Source Off Leakage, IS (Off ) ±0.01 nA typ VS = 1 V/4.5 V, VD = 4.5 V/1 V, Figure 15 ±0.1 ±0.25 ±2 nA max VS = 1 V/4.5 V, VD = 4.5 V/1 V, Figure 15 Drain Off Leakage, ID (Off ) ±0.01 nA typ VS = 1 V/4.5 V, VD = 4.5 V/1 V, Figure 15 ±0.1 ±0.25 ±2 nA max VS = 1 V/4.5 V, VD = 4.5 V/1 V, Figure 15 Channel On Leakage, ID (On), IS (On) ±0.01 nA typ VS = VD = 4.5 V/1 V, Figure 16 ±0.1 ±0.25 ±6 nA max VS = VD = 4.5 V/1 V, Figure 16 DIGITAL INPUTS Input High Voltage, VINH 2.4 V min Input Low Voltage, VINL 0.8 V max Input Current, IINL or IINH 0.005 μA typ VIN = VINL or VINH ±0.1 μA max VIN = VINL or VINH Digital Input Capacitance, CIN 2 pF typ DYNAMIC CHARACTERISTICS1 Transition Time 90 ns typ VS1A = 3 V, VS1B = 0 V, RL = 300 Ω, CL = 35 pF, Figure 17 150 185 210 ns max VS1A = 3 V, VS1B = 0 V, RL = 300 Ω, CL = 35 pF, Figure 17 tON Enable 135 ns typ RL = 300 Ω, CL = 35 pF, VS = 3 V, Figure 19 180 235 275 ns max RL = 300 Ω, CL = 35 pF, VS = 3 V, Figure 19 tOFF Enable 70 ns typ RL = 300 Ω, CL = 35 pF, VS = 3 V, Figure 19 105 120 135 ns max RL = 300 Ω, CL = 35 pF, VS = 3 V, Figure 19 Break-Before-Make Time Delay, tBBM 30 ns typ RL = 300 Ω, CL = 35 pF, VS = 3 V, Figure 18 10 ns min RL = 300 Ω, CL = 35 pF, VS = 3 V, Figure 18 Charge Injection 0.3 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF, Figure 20 Off Isolation −60 dB typ RL = 50 Ω, CL = 5 pF, f = 10 MHz, Figure 21 Channel-to-Channel Crosstalk −65 dB typ RL = 50 Ω, CL = 5 pF, f = 10 MHz, Figure 23 Bandwidth −3 dB 530 MHz typ RL = 50 Ω, CL = 5 pF, Figure 22 CS (Off ) 5 pF typ f = 1 MHz CD (Off ) 8 pF typ f = 1 MHz CD (On), CS (On) 8 pF typ f = 1 MHz Rev. B | Page 5 of 16 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION PRODUCT HIGHLIGHTS TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS DUAL SUPPLY SINGLE SUPPLY ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS TYPICAL PERFORMANCE CHARACTERISTICS TEST CIRCUITS TERMINOLOGY OUTLINE DIMENSIONS ORDERING GUIDE