Datasheet 2N5088, 2N5089, MMBT5088, MMBT5089 (ON Semiconductor) - 2

2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088
2N5089 MMBT5088
MMBT5089
C E
C B TO-92 SOT-23 E B Mark: 1Q / 1R NPN General Purpose Amplifier
This device is designed for low noise, high gain, general purpose
amplifier applications at collector currents from 1µA to 50 mA. Absolute Maximum Ratings*
Symbol TA = 25°C unless otherwise noted Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current -Continuous TJ, Tstg Operating and Storage Junction Temperature Range Value Units 30
25
35
30
4.5 V
V
V
V
V 100 mA -55 to +150 °C 2N5088
2N5089
2N5088
2N5089 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics
Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient Max Units 2N5088
2N5089
625
5.0
83.3 *MMBT5088
*MMBT5089
350
2.8 200 357 mW
mW/°C
°C/W
°C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 2001 Fairchild Semiconductor Corporation 2N5088/2N5089/MMBT5088/MMBT5089, Rev A