Datasheet 2N5088, 2N5089, MMBT5088, MMBT5089 (ON Semiconductor) - 3

(continued) Electrical Characteristics
Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units 50
50
50
100 V
V
V
V
nA
nA
nA
nA OFF CHARACTERISTICS
V(BR)CEO IC = 1.0 mA, IB = 0 V(BR)CBO Collector-Emitter Breakdown
Voltage*
Collector-Base Breakdown Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current VCB = 20 V, IE = 0
VCB = 15 V, IE = 0
VEB = 3.0 V, IC = 0
VEB = 4.5 V, IC = 0 IC = 100 µA, IE = 0 5088
5089
5088
5089
5088
5089 30
25
35
30 5088
5089
5088
5089
5088
5089 300
400
350
450
300
400 ON CHARACTERISTICS
hFE DC Current Gain IC = 100 µA, VCE = 5.0 V
IC = 1.0 mA, VCE = 5.0 V
IC = 10 mA, VCE = 5.0 V* 900
1200 VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA 0.5 V VBE(on) Base-Emitter On Voltage IC = 10 mA, VCE = 5.0 V 0.8 V 2N5088 / MMBT5088 / 2N5089 / MMBT5089 NPN General Purpose Amplifier SMALL SIGNAL CHARACTERISTICS
fT Current Gain -Bandwidth Product Ccb Collector-Base Capacitance IC = 500 µA,VCE = 5.0 mA,
f = 20 MHz
VCB = 5.0 V, IE = 0, f = 100 kHz Ceb Emitter-Base Capacitance VBE = 0.5 V, IC = 0, f = 100 kHz hfe Small-Signal Current Gain NF Noise Figure IC = 1.0 mA, VCE = 5.0 V,
f = 1.0 kHz
IC = 100 µA, VCE = 5.0 V,
RS = 10 kΩ,
f = 10 Hz to 15.7 kHz 5088
5089
5088
5089 50 350
450 MHz
4.0 pF 10 pF 1400
1800
3.0
2.0 dB
dB *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Spice Model
NPN (Is=5.911f Xti=3 Eg=1.11 Vaf=62.37 Bf=1.122K Ne=1.394 Ise=5.911f Ikf=14.92m Xtb=1.5 Br=1.271 Nc=2
Isc=0 Ikr=0 Rc=1.61 Cjc=4.017p Mjc=.3174 Vjc=.75 Fc=.5 Cje=4.973p Mje=.4146 Vje=.75 Tr=4.673n Tf=821.7p
Itf=.35 Vtf=4 Xtf=7 Rb=10) 3