Datasheet MMBTH10 (Diodes)

MMBTH10 NPN SURFACE MOUNT VHF/UHF TRANSISTOR
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Features
• Designed for VHF/UHF Amplifier Applications and High Output VHF Oscillators
C SOT-23
• High Current Gain Bandwidth Product •
Dim Min Max
Ideal for Mixer and RF Amplifier Applications with collector currents in the 100μA - 30 mA Range
A
0.37 0.51 •
Lead, Halogen and Antimony Free, RoHS Compliant B E B
1.20 1.40
"Green" Device (Notes 3 and 4)
•
C
2.30 2.50
Qualified to AEC-Q101 Standards for High Reliability D
0.89 1.03
Mechanical Data E
0.45 0.60
G
1.78 2.05 • Case: SOT-23
H
2.80 3.00 • Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0
J
0.013 0.10 • Moisture Sensitivity: Level 1 per J-STD-020D
K
0.903 1.10 • Terminals: Solderable per MIL-STD-202, Method 208
L
0.45 0.61 • Terminal Connections: See Diagram •
M
0.085 0.180 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). α 0° 8° • Marking Information: K3H, K3Y; See Page 3
All Dimensions in mm
• Ordering Information: See Page 3 • Weight: 0.008 grams (approximate)
Maximum Ratings
@TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 3.0 V Collector Current - Continuous (Note 1) IC 50 mA Power Dissipation (Note 1) PD 300 mW Thermal Resistance, Junction to Ambient (Note 1) RθJA 417 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Electrical Characteristics
@TA = 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 2)
Collector-Emitter Breakdown Voltage V(BR)CEO 25 ⎯ V IC = 1mA, IB = 0 Collector-Base Breakdown Voltage V(BR)CBO 30 ⎯ V IC = 100μA, IE = 0 Emitter-Base Breakdown Voltage V(BR)EBO 3.0 ⎯ V IE = 10μA, IC = 0 Collector Cutoff Current ICBO ⎯ 100 nA VCB = 25V, IE = 0 Emitter Cutoff Current IEBO ⎯ 100 nA VEB = 2V, IC = 0
ON CHARACTERISTICS (Note 2)
DC Current Gain hFE 60 ⎯ ⎯ IC = 4mA, VCE = 10.0V Collector-Emitter Saturation Voltage VCE(SAT) ⎯ 0.5 V IC = 4mA, IB = 400μA Base-Emitter On Voltage VBE(SAT) ⎯ 0.95 V IC = 4mA, VCE = 10.0V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product fT 650 ⎯ MHz VCE = 10V, f = 100MHz, IC = 4mA Collector-Base Capacitance CCB ⎯ 0.7 pF VCB = 10V, f = 1.0MHz, IE = 0 Collector-Base Feedback Capacitance CRB ⎯ 0.65 pF VCB = 10V, f = 1.0MHz, IE = 0 Collector-Base Time Constant Rb’Cc ⎯ 9 ps VCB = 10V, f = 31.8MHz, IC = 4mA Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch, pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Short duration pulse test used to minimize self-heating effect. 3. No purposefully added lead. Halogen and Antimony Free. 4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. DS31031 Rev. 12 - 2 1 of 3 MMBTH10
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© Diodes Incorporated Document Outline MMBTH10 Features Mechanical Data