VS-15TQ060-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETERSYMBOLTEST CONDITIONSVALUESUNITS 15 A 0.62 TJ = 25 °C Maximum forward voltage drop 30 A 0.82 V (1) V See fig. 1 FM 15 A 0.56 TJ = 125 °C 30 A 0.71 TJ = 25 °C 0.80 Maximum reverse leakage current IRM (1) VR = Rated VR mA TJ = 125 °C 160 Typical reverse leakage current IRM (1) TJ = 125 °C VR = Rated VR 45 mA Maximum junction capacitance CT VR = 5 VDC, (test signal range 100 kHz to 1 MHz) 25 °C 720 pF Typical series inductance LS Measured lead to lead 5 mm from package body 8 nH Maximum voltage rate of change dV/dt Rated VR 10 000 V/μs Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETERSYMBOLTEST CONDITIONSVALUESUNITS Maximum junction and storage T temperature range J, TStg -55 to 150 °C Maximum thermal resistance, DC operation R 3.25 junction to case thJC See fig. 4 °C/W Typical thermal resistance, R case to heatsink thCS Mounting surface, smooth and greased 0.50 2 g Approximate weight 0.07 oz. minimum 6 (5) kgf · cm Mounting torque (lbf · in) maximum 12 (10) Marking device Case style 2L TO-220AC (JEDEC®) 15TQ060 Revision: 22-Dec-2021 2 Document Number: 96290 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000