Datasheet NDS331N (ON Semiconductor) - 5
| Manufacturer | ON Semiconductor |
| Description | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Pages / Page | 9 / 5 — NDS331N. TYPICAL ELECTRICAL CHARACTERISTICS. Figure 7. Breakdown Voltage … |
| File Format / Size | PDF / 282 Kb |
| Document Language | English |
NDS331N. TYPICAL ELECTRICAL CHARACTERISTICS. Figure 7. Breakdown Voltage Variation with
Model Line for this Datasheet
Text Version of Document
NDS331N TYPICAL ELECTRICAL CHARACTERISTICS
(continued) 1.12 1 ID = 250 A VGS = 0 V 1.08 −Source 0.1 oltage 1.04 TJ = 125°C 0.01 25°C 1 , Normalized Drain Breakdown V 0.001 −55°C 0.96 , Reverse Drain Current (A) DSS I S BV 0.92 0.0001 −50 −25 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1 1.2 TJ, Junction Temperature (°C) VSD, Body Diode Forward Voltage (V)
Figure 7. Breakdown Voltage Variation with Figure 8. Body Diode Forward Voltage Variation Temperature with Source Current and Temperature
600 5 400 ID = 1.3 A VDS = 5 V 10 V 4 200 Ciss oltage (V) 15 V Coss 3 100 50 −Source V 2 Capacitance (pF) Crss , Gate 1 20 f = 1 MHz V GS VGS = 0 V 10 0 0.1 0.2 0.5 1 2 5 10 20 0 1 2 3 4 5 VDS, Drain−Source Voltage (V) Qg, Gate Charge (nC)
Figure 9. Capacitance Characteristics Figure 10. Gate Charge Characteristics
VDD ton toff td(on) tr td(off) tf VIN RL 90% 90% D VOUT VGS VOUT 10% 10% RGEN G DUT Inverted 90% 50% 50% S VIN 10% Pulse Width
Figure 11. Switching Test Circuit Figure 12. Switching Waveforms www.onsemi.com 5
(continued) 1.12 1 ID = 250 A VGS = 0 V 1.08 −Source 0.1 oltage 1.04 TJ = 125°C 0.01 25°C 1 , Normalized Drain Breakdown V 0.001 −55°C 0.96 , Reverse Drain Current (A) DSS I S BV 0.92 0.0001 −50 −25 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1 1.2 TJ, Junction Temperature (°C) VSD, Body Diode Forward Voltage (V)
Figure 7. Breakdown Voltage Variation with Figure 8. Body Diode Forward Voltage Variation Temperature with Source Current and Temperature
600 5 400 ID = 1.3 A VDS = 5 V 10 V 4 200 Ciss oltage (V) 15 V Coss 3 100 50 −Source V 2 Capacitance (pF) Crss , Gate 1 20 f = 1 MHz V GS VGS = 0 V 10 0 0.1 0.2 0.5 1 2 5 10 20 0 1 2 3 4 5 VDS, Drain−Source Voltage (V) Qg, Gate Charge (nC)
Figure 9. Capacitance Characteristics Figure 10. Gate Charge Characteristics
VDD ton toff td(on) tr td(off) tf VIN RL 90% 90% D VOUT VGS VOUT 10% 10% RGEN G DUT Inverted 90% 50% 50% S VIN 10% Pulse Width
Figure 11. Switching Test Circuit Figure 12. Switching Waveforms www.onsemi.com 5
