Datasheet ALD1106, ALD1116 (Advanced Linear Devices) - 2
| Manufacturer | Advanced Linear Devices |
| Description | Quad/Dual N-Channel Matched Pair Mosfet Array |
| Pages / Page | 9 / 2 — ABSOLUTE MAXIMUM RATINGS. CAUTION: ESD Sensitive Device. Use static … |
| File Format / Size | PDF / 84 Kb |
| Document Language | English |
ABSOLUTE MAXIMUM RATINGS. CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment
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ABSOLUTE MAXIMUM RATINGS
Drain-source voltage, VDS 10V Gate-source voltage, VGS 10V Power dissipation 500mW Operating temperature range SAL, PAL, SBL, PBL packages 0°C to +70°C Storage temperature range -65°C to +150°C Lead temperature, 10 seconds +260°C
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment. OPERATING ELECTRICAL CHARACTERISTICS TA = 25
°
C unless otherwise specified ALD1106 ALD1116 Test Parameter Symbol Min Typ Max Min Typ Max Unit Conditions
Gate Threshold VT 0.4 0.7 1.0 0.4 0.7 1.0 V IDS = 1.0µA VGS = VDS Voltage Offset Voltage VOS 2 10 2 10 mV IDS = 10µA VGS = VDS VGS1-VGS2 Gate Threshold Temperature TCVT -1.2 -1.2 mV/°C Drift 2 On Drain IDS(ON) 3.0 4.8 3.0 4.8 mA VGS = VDS = 5V Current Transconductance GIS 1.0 1.8 1.0 1.8 mmho VDS = 5V IDS = 10mA Mismatch ∆Gfs 0.5 0.5 % Output GOS 200 200 µmho VDS = 5V IDS = 10mA Conductance Drain Source RDS(ON) 350 500 350 500 Ω VDS = 0.1V VGS = 5V On Resistance Drain Source On Resistence ∆DS(ON) 0.5 0.5 % VDS = 0.1V VGS = 5V Mismatch Drain Source Breakdown BVDSS 10 10 V IDS = 1.0µA VGS = 0V Voltage Off Drain IDS(OFF) 10 400 10 400 pA VDS = 10V VGS = 0V Current 1 4 4 nA TA = 125°C Gate Leakage IGSS 1 100 1 100 pA VDS = 0V VGS = 10V Current 1 1 nA TA = 125°C Input CISS 1 3 1 3 pF Capacitance 2 Notes: 1 Consists of junction leakage currents 2 Sample tested parameters
ALD1106/ALD1116
Advanced Linear Devices 2 of 9
Drain-source voltage, VDS 10V Gate-source voltage, VGS 10V Power dissipation 500mW Operating temperature range SAL, PAL, SBL, PBL packages 0°C to +70°C Storage temperature range -65°C to +150°C Lead temperature, 10 seconds +260°C
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment. OPERATING ELECTRICAL CHARACTERISTICS TA = 25
°
C unless otherwise specified ALD1106 ALD1116 Test Parameter Symbol Min Typ Max Min Typ Max Unit Conditions
Gate Threshold VT 0.4 0.7 1.0 0.4 0.7 1.0 V IDS = 1.0µA VGS = VDS Voltage Offset Voltage VOS 2 10 2 10 mV IDS = 10µA VGS = VDS VGS1-VGS2 Gate Threshold Temperature TCVT -1.2 -1.2 mV/°C Drift 2 On Drain IDS(ON) 3.0 4.8 3.0 4.8 mA VGS = VDS = 5V Current Transconductance GIS 1.0 1.8 1.0 1.8 mmho VDS = 5V IDS = 10mA Mismatch ∆Gfs 0.5 0.5 % Output GOS 200 200 µmho VDS = 5V IDS = 10mA Conductance Drain Source RDS(ON) 350 500 350 500 Ω VDS = 0.1V VGS = 5V On Resistance Drain Source On Resistence ∆DS(ON) 0.5 0.5 % VDS = 0.1V VGS = 5V Mismatch Drain Source Breakdown BVDSS 10 10 V IDS = 1.0µA VGS = 0V Voltage Off Drain IDS(OFF) 10 400 10 400 pA VDS = 10V VGS = 0V Current 1 4 4 nA TA = 125°C Gate Leakage IGSS 1 100 1 100 pA VDS = 0V VGS = 10V Current 1 1 nA TA = 125°C Input CISS 1 3 1 3 pF Capacitance 2 Notes: 1 Consists of junction leakage currents 2 Sample tested parameters
ALD1106/ALD1116
Advanced Linear Devices 2 of 9
