Datasheet ALD1106, ALD1116 (Advanced Linear Devices) - 3

TYPICAL PERFORMANCE CHARACTERISTICS OUTPUT CHARACTERISTICS LOW VOLTAGE OUTPUT CHARACTERISTICS
20 1000
VBS = 0V V V V BS = 0V GS = 10V T GS = 10V A = +25
°
C TA = 25
°
C 8V
15 500
6V 8V
A)
4V
(mA) (µ
2V
10 0
6V
DS(ON) I I DS(ON) 5
4V
-500
2V
DRAIN SOURCE ON CURRENT DRAIN SOURCE ON CURRENT 0 -1000 0 2 4 6 8 10 -160 -80 0 +80 +160 DRAIN SOURCE ON VOLTAGE - VDS(ON) (V) DRAIN SOURCE ON VOLTAGE - VDS(ON) (mV)
FORWARD TRANSCONDUCTANCE vs. TRANSFER CHARACTERISTIC DRAIN-SOURCE VOLTAGE WITH SUBSTRATE BIAS
20 20
VBS = 0V f = 1KHz VGS = VDS
10
VBS = 0V TA = +25
°
C -2V IDS = 10mA
15 5
TA = +25
°
C
A)
-4V TA = +125
°
C
(µ
-6V
2 10 (mmho)
-8V
1 DS(ON) I 5 0.5
-10V I
DRAIN SOURCE ON CURRENT
DS = 1mA
FORWARD TRANSCONDUCTANCE 0.2 0 0 2 4 6 8 10 0 0.8 1.6 2.4 3.2 4.0 DRAIN SOURCE ON VOLTAGE - VDS(ON) (V) GATE SOURCE ON VOLTAGE - VGS(ON) (V)
DRAIN SOURCE ON RESISTANCE vs. DRAIN SOURCE OFF CURRENT vs. GATE-SOURCE VOLTAGE AMBIENT TEMPERATURE
100 1000
VDS = 0.2V V V DS = 10V BS = 0V VGS = VBS = 0V
) Ω 10 100 (K (pA)
TA = +125
°
C
DS(ON) DS(OFF) R 1 R 10
TA = +25
°
C
DRAIN SOURCE OFF CURRENT DRAIN SOURCE ON RESISTANCE 0.1 1 0 2 4 6 8 10 -50 -25 0 +25 +50 +75 +100 +125 GATE SOURCE ON VOLTAGE - VGS(ON) (V) AMBIENT TEMPERATURE - TA (°C)
ALD1106/ALD1116
Advanced Linear Devices 3 of 9