Datasheet LME49710 (National Semiconductor) - 8
Manufacturer | National Semiconductor |
Description | High Performance, High Fidelity Audio Operational Amplifier |
Pages / Page | 28 / 8 — THD+N vs Frequency. = 15V, V. = –15V,. = 17V, V. = –17V,. R = 2k. , V. = … |
File Format / Size | PDF / 840 Kb |
Document Language | English |
THD+N vs Frequency. = 15V, V. = –15V,. = 17V, V. = –17V,. R = 2k. , V. = 3V. OUT. RMS. LME49710. R = 10k
Model Line for this Datasheet
Text Version of Document
THD+N vs Frequency THD+N vs Frequency V = 15V, V = –15V, V = 17V, V = –17V, CC EE CC EE R = 2k
Ω
, V = 3V R = 2k
Ω
, V = 3V L OUT RMS L OUT RMS LME49710
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THD+N vs Frequency THD+N vs Frequency V = 15V, V = –15V, V = 17V, V = –17V, CC EE CC EE R
= 600Ω
, V = 3V R
= 600Ω
, V = 3V L OUT RMS L OUT RMS
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THD+N vs Frequency THD+N vs Frequency V = 15V, V = –15V, V = 17V, V = –17V, CC EE CC EE R = 10k
Ω
, V = 3V R = 10k
Ω
, V = 3V L OUT RMS L OUT RMS
20210465 20210468 www.national.com 8 Document Outline LME49710 General Description Key Specifications Features Applications Typical Application FIGURE 1. Passively Equalized RIAA Phono Preamplifier Connection Diagrams Absolute Maximum Ratings Electrical Characteristics Typical Performance Characteristics Application Hints Noise Measurement Circuit Typical Applications Application Information DISTORTION MEASUREMENTS FIGURE 2. THD+N and IMD Distortion Test Circuit Revision History Physical Dimensions