Datasheet APT40M35JVR (APT)
| Manufacturer | APT |
| Description | POWER MOS V 400V 93A 0.035Ω |
| Pages / Page | 4 / 1 — APT40M35JVR. 400V. 93A. 0.035. POWER MOS V®. "UL Recognized". … |
| File Format / Size | PDF / 74 Kb |
| Document Language | English |
APT40M35JVR. 400V. 93A. 0.035. POWER MOS V®. "UL Recognized". ISOTOP. • Faster Switching. • 100% Avalanche Tested
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APT40M35JVR 400V 93A 0.035
Ω
S S POWER MOS V®
Power MOS V® is a new generation of high voltage N-Channel enhancement
G D
mode power MOSFETs. This new technology minimizes the JFET effect, SOT-227 increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
"UL Recognized" ISOTOP
®
• Faster Switching • 100% Avalanche Tested D • Lower Leakage • Popular SOT-227 Package G S MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol Parameter APT40M35JVR UNIT
VDSS Drain-Source Voltage 400 Volts ID Continuous Drain Current @ TC = 25°C 93 Amps IDM Pulsed Drain Current 1 372 V ± GS Gate-Source Voltage Continuous 30 Volts V ± GSM Gate-Source Voltage Transient 40 Total Power Dissipation @ T 700 Watts P C = 25°C D Linear Derating Factor 5.6 W/°C T ,T J STG Operating and Storage Junction Temperature Range -55 to 150 °C TL Lead Temperature: 0.063" from Case for 10 Sec. 300 IAR Avalanche Current 1 (Repetitive and Non-Repetitive) 93 Amps E 50 AR Repetitive Avalanche Energy 1 mJ EAS Single Pulse Avalanche Energy 4 3600
STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT
BV Drain-Source Breakdown Voltage (V = 0V, I = 250µA) DSS 400 Volts GS D I On State Drain Current 2 (V > I x R Max, V = 10V) 93 Amps D(on) DS D(on) DS(on) GS R Drain-Source On-State Resistance 2 (V = 10V, 0.5 I ) DS(on) 0.035 Ohms GS D[Cont.] Zero Gate Voltage Drain Current (V = V , V = 0V) DS DSS GS 100 I µA DSS Zero Gate Voltage Drain Current (V = 0.8 V , V = 0V, T = 125°C) DS DSS GS C 500 I Gate-Source Leakage Current (V = ±30V, V = 0V) ± GSS 100 nA GS DS V Gate Threshold Voltage (V = V , I = 5.0mA) GS(th) DS GS D 2 4 Volts
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 EUROPE Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61
050-5586 Rev A
Ω
S S POWER MOS V®
Power MOS V® is a new generation of high voltage N-Channel enhancement
G D
mode power MOSFETs. This new technology minimizes the JFET effect, SOT-227 increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
"UL Recognized" ISOTOP
®
• Faster Switching • 100% Avalanche Tested D • Lower Leakage • Popular SOT-227 Package G S MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol Parameter APT40M35JVR UNIT
VDSS Drain-Source Voltage 400 Volts ID Continuous Drain Current @ TC = 25°C 93 Amps IDM Pulsed Drain Current 1 372 V ± GS Gate-Source Voltage Continuous 30 Volts V ± GSM Gate-Source Voltage Transient 40 Total Power Dissipation @ T 700 Watts P C = 25°C D Linear Derating Factor 5.6 W/°C T ,T J STG Operating and Storage Junction Temperature Range -55 to 150 °C TL Lead Temperature: 0.063" from Case for 10 Sec. 300 IAR Avalanche Current 1 (Repetitive and Non-Repetitive) 93 Amps E 50 AR Repetitive Avalanche Energy 1 mJ EAS Single Pulse Avalanche Energy 4 3600
STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT
BV Drain-Source Breakdown Voltage (V = 0V, I = 250µA) DSS 400 Volts GS D I On State Drain Current 2 (V > I x R Max, V = 10V) 93 Amps D(on) DS D(on) DS(on) GS R Drain-Source On-State Resistance 2 (V = 10V, 0.5 I ) DS(on) 0.035 Ohms GS D[Cont.] Zero Gate Voltage Drain Current (V = V , V = 0V) DS DSS GS 100 I µA DSS Zero Gate Voltage Drain Current (V = 0.8 V , V = 0V, T = 125°C) DS DSS GS C 500 I Gate-Source Leakage Current (V = ±30V, V = 0V) ± GSS 100 nA GS DS V Gate Threshold Voltage (V = V , I = 5.0mA) GS(th) DS GS D 2 4 Volts
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 EUROPE Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61
050-5586 Rev A
