Datasheet BAR42, BAR43 (STMicroelectronics) - 2
| Manufacturer | STMicroelectronics |
| Description | Small Signal Schottky Diode |
| Pages / Page | 7 / 2 — Characteristics. BAR42, BAR43. 1 Characteristics. Table 2. Absolute … |
| File Format / Size | PDF / 122 Kb |
| Document Language | English |
Characteristics. BAR42, BAR43. 1 Characteristics. Table 2. Absolute ratings (limiting values). Symbol. Parameter. Value. Unit
Model Line for this Datasheet
Text Version of Document
Characteristics BAR42, BAR43 1 Characteristics Table 2. Absolute ratings (limiting values) Symbol Parameter Value Unit
VDRM Repetitive peak off-state voltage 30 V IF(AV) Continuous forward current 0.1 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 0.75 A Ptot Power dissipation(1) Tamb = 25 °C 250 mW Tstg Maximum Storage temperature range - 65 to + 150 °C Tj Maximum operating junction temperature(2) 150 °C TL Maximum temperature for soldering during 10 s 260 °C 1. For double diodes, Ptot is the total dissipation of both diodes dPtot 1 2. < condition to avoid thermal runaway for a diode on its own heatsink. dTj Rth(j-a)
Table 3. Thermal parameter Symbol Parameter Value Unit
Rth(j-a) Junction to ambient(1) 500 °C/W 1. Mounted on epoxy board with recommended pad layout.
Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit
Breakdown VBR T voltage j = 25 °C IR = 100 µA 30 V Reverse leakage Tj = 25 °C 500 nA IR (1) V current R = VRRM Tj = 100 °C 100 µA IF = 10 mA 0.35 0.40 BAR42 IF = 50 mA 0.50 0.65 Forward voltage VF (2) T I V drop j = 25 °C F = 2 mA 0.26 0.33 BAR43 IF = 15 mA 0.45 ALL IF =100 mA 1 1. Pulse test: tp = 5 ms, δ < 2 % 2. Pulse test: tp = 380 µs, δ < 2 % 2/7 DocID3288 Rev 5 Document Outline Table 1. Device summary 1 Characteristics Table 2. Absolute ratings (limiting values) Table 3. Thermal parameter Table 4. Static electrical characteristics Table 5. Dynamic characteristics (Tj = 25 °C) Figure 1. Forward voltage drop versus forward current (typical values, low level) Figure 2. Forward voltage drop versus forward current (typical values, high level) Figure 3. Reverse leakage current versus reverse voltage applied (typical values) Figure 4. Reverse leakage current versus junction temperature Figure 5. Junction capacitance versus reverse voltage applied (typical values) Figure 6. Relative variation of thermal impedance junction to ambient versus pulse duration Figure 7. Thermal resistance junction to ambient versus copper surface under each lead 2 Package information Table 6. SOT23-3L dimensions Figure 8. Footprint (dimensions in mm) 3 Ordering information Table 7. Ordering information 4 Revision history Table 8. Document revision history
VDRM Repetitive peak off-state voltage 30 V IF(AV) Continuous forward current 0.1 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 0.75 A Ptot Power dissipation(1) Tamb = 25 °C 250 mW Tstg Maximum Storage temperature range - 65 to + 150 °C Tj Maximum operating junction temperature(2) 150 °C TL Maximum temperature for soldering during 10 s 260 °C 1. For double diodes, Ptot is the total dissipation of both diodes dPtot 1 2. < condition to avoid thermal runaway for a diode on its own heatsink. dTj Rth(j-a)
Table 3. Thermal parameter Symbol Parameter Value Unit
Rth(j-a) Junction to ambient(1) 500 °C/W 1. Mounted on epoxy board with recommended pad layout.
Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit
Breakdown VBR T voltage j = 25 °C IR = 100 µA 30 V Reverse leakage Tj = 25 °C 500 nA IR (1) V current R = VRRM Tj = 100 °C 100 µA IF = 10 mA 0.35 0.40 BAR42 IF = 50 mA 0.50 0.65 Forward voltage VF (2) T I V drop j = 25 °C F = 2 mA 0.26 0.33 BAR43 IF = 15 mA 0.45 ALL IF =100 mA 1 1. Pulse test: tp = 5 ms, δ < 2 % 2. Pulse test: tp = 380 µs, δ < 2 % 2/7 DocID3288 Rev 5 Document Outline Table 1. Device summary 1 Characteristics Table 2. Absolute ratings (limiting values) Table 3. Thermal parameter Table 4. Static electrical characteristics Table 5. Dynamic characteristics (Tj = 25 °C) Figure 1. Forward voltage drop versus forward current (typical values, low level) Figure 2. Forward voltage drop versus forward current (typical values, high level) Figure 3. Reverse leakage current versus reverse voltage applied (typical values) Figure 4. Reverse leakage current versus junction temperature Figure 5. Junction capacitance versus reverse voltage applied (typical values) Figure 6. Relative variation of thermal impedance junction to ambient versus pulse duration Figure 7. Thermal resistance junction to ambient versus copper surface under each lead 2 Package information Table 6. SOT23-3L dimensions Figure 8. Footprint (dimensions in mm) 3 Ordering information Table 7. Ordering information 4 Revision history Table 8. Document revision history
