Datasheet BAR42, BAR43 (STMicroelectronics) - 3
| Manufacturer | STMicroelectronics |
| Description | Small Signal Schottky Diode |
| Pages / Page | 7 / 3 — BAR42, BAR43. Characteristics. Table 5. Dynamic characteristics (Tj = 25 … |
| File Format / Size | PDF / 122 Kb |
| Document Language | English |
BAR42, BAR43. Characteristics. Table 5. Dynamic characteristics (Tj = 25 °C). Symbol. Test conditions. Min. Typ. Max. Unit
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BAR42, BAR43 Characteristics Table 5. Dynamic characteristics (Tj = 25 °C) Symbol Test conditions Min. Typ. Max. Unit
C Junction capacitance Tj = 25 °C VR = 1 V F = 1 MHz 7 pF I C Reverse recovery time F = 10 mA IR = 10 mA Tj = 25 °C Irr = 1 mA RL = 100 Ω 5 pF η C Detection efficiency L = 300 pF F = 45 MHz Tj = 25 °C Vi = 2 V RL = 50 Ω 80 ps
Figure 1. Forward voltage drop versus forward Figure 2. Forward voltage drop versus forward current (typical values, low level) current (typical values, high level) IFM(A) IFM(A)
2.00E-2 5E-1 1.80E-2 1.60E-2 T =100°C j 1E-1 1.40E-2 T =100°C j 1.20E-2 1.00E-2 8.00E-3 T =50°C T j j=25°C 1E-2 T =50°C T =25°C j j 6.00E-3 4.00E-3 2.00E-3
VFM(V) VFM(V)
0.00E+0 1E-3 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
Figure 3. Reverse leakage current versus Figure 4. Reverse leakage current versus reverse voltage applied (typical values) junction temperature IR(µA) IR(µA)
1E+2 1E+4 T =100°C V =30V j R 1E+3 1E+1 1E+2 1E+0 1E+1 T =50°C j 1E+0 1E-1 T =25°C j 1E-1
VR(V) VR(V)
1E-2 1E-2 0 5 10 15 20 25 30 0 25 50 75 100 125 150 DocID3288 Rev 5 3/7 7 Document Outline Table 1. Device summary 1 Characteristics Table 2. Absolute ratings (limiting values) Table 3. Thermal parameter Table 4. Static electrical characteristics Table 5. Dynamic characteristics (Tj = 25 °C) Figure 1. Forward voltage drop versus forward current (typical values, low level) Figure 2. Forward voltage drop versus forward current (typical values, high level) Figure 3. Reverse leakage current versus reverse voltage applied (typical values) Figure 4. Reverse leakage current versus junction temperature Figure 5. Junction capacitance versus reverse voltage applied (typical values) Figure 6. Relative variation of thermal impedance junction to ambient versus pulse duration Figure 7. Thermal resistance junction to ambient versus copper surface under each lead 2 Package information Table 6. SOT23-3L dimensions Figure 8. Footprint (dimensions in mm) 3 Ordering information Table 7. Ordering information 4 Revision history Table 8. Document revision history
C Junction capacitance Tj = 25 °C VR = 1 V F = 1 MHz 7 pF I C Reverse recovery time F = 10 mA IR = 10 mA Tj = 25 °C Irr = 1 mA RL = 100 Ω 5 pF η C Detection efficiency L = 300 pF F = 45 MHz Tj = 25 °C Vi = 2 V RL = 50 Ω 80 ps
Figure 1. Forward voltage drop versus forward Figure 2. Forward voltage drop versus forward current (typical values, low level) current (typical values, high level) IFM(A) IFM(A)
2.00E-2 5E-1 1.80E-2 1.60E-2 T =100°C j 1E-1 1.40E-2 T =100°C j 1.20E-2 1.00E-2 8.00E-3 T =50°C T j j=25°C 1E-2 T =50°C T =25°C j j 6.00E-3 4.00E-3 2.00E-3
VFM(V) VFM(V)
0.00E+0 1E-3 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
Figure 3. Reverse leakage current versus Figure 4. Reverse leakage current versus reverse voltage applied (typical values) junction temperature IR(µA) IR(µA)
1E+2 1E+4 T =100°C V =30V j R 1E+3 1E+1 1E+2 1E+0 1E+1 T =50°C j 1E+0 1E-1 T =25°C j 1E-1
VR(V) VR(V)
1E-2 1E-2 0 5 10 15 20 25 30 0 25 50 75 100 125 150 DocID3288 Rev 5 3/7 7 Document Outline Table 1. Device summary 1 Characteristics Table 2. Absolute ratings (limiting values) Table 3. Thermal parameter Table 4. Static electrical characteristics Table 5. Dynamic characteristics (Tj = 25 °C) Figure 1. Forward voltage drop versus forward current (typical values, low level) Figure 2. Forward voltage drop versus forward current (typical values, high level) Figure 3. Reverse leakage current versus reverse voltage applied (typical values) Figure 4. Reverse leakage current versus junction temperature Figure 5. Junction capacitance versus reverse voltage applied (typical values) Figure 6. Relative variation of thermal impedance junction to ambient versus pulse duration Figure 7. Thermal resistance junction to ambient versus copper surface under each lead 2 Package information Table 6. SOT23-3L dimensions Figure 8. Footprint (dimensions in mm) 3 Ordering information Table 7. Ordering information 4 Revision history Table 8. Document revision history
