Datasheet EPC2361 (Efficient Power Conversion)
| Manufacturer | Efficient Power Conversion |
| Description | Enhancement Mode Power Transistor |
| Pages / Page | 10 / 1 — eGaN® FET DATASHEET. EPC2361 – Enhancement Mode Power Transistor. … |
| File Format / Size | PDF / 1.9 Mb |
| Document Language | English |
eGaN® FET DATASHEET. EPC2361 – Enhancement Mode Power Transistor. EFFICIENT POWER CONVERSION. PRELIMINARY. HAL. Description
Model Line for this Datasheet
Text Version of Document
eGaN® FET DATASHEET
EPC2361
EPC2361 – Enhancement Mode Power Transistor D
VDS , 100 V R
G
DS(on) , 1.0 mΩ typical
EFFICIENT POWER CONVERSION
I
PRELIMINARY
D, 101 A
S HAL Description
Gal ium Nitride’s exceptional y high electron mobility and low temperature coefficient al ows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptional y low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.
Application notes: EPC2361
• Easy-to-use and reliable gate, Gate Drive ON = 5 V typical,
Questions:
Package size: 3 x 5 mm OFF = 0 V (negative voltage not needed)
Ask a G aN Expert
• Top of FET is electrical y connected to source
Applications
• High Power PSU AC-DC Synchronous Rectification
Maximum Ratings
• High Frequency DC-DC Conversion up to 80 V
PARAMETER VALUE UNIT
input (Buck, Boost, Buck-Boost and LLC) Drain-to-Source Voltage (Continuous) 100 • 24 V–60 V Motor Drives VDS V Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150 °C) 120 • High Power Density DC-DC modules from Continuous (TA = 25°C) 101 40 V– 60 V to 5 V–12 V ID A Pulsed (25°C, TPULSE = 300 µs) 519 • Synchronous Rectification Gate-to-Source Voltage 6 • Solar MPPT VGS V Gate-to-Source Voltage -4 TJ Operating Temperature –40 to 150
Benefits
°C TSTG Storage Temperature –40 to 150 • Ultra High Efficiency • No Reverse Recovery
Thermal Characteristics
• Ultra Low QG
PARAMETER TYP UNIT
• Small Footprint RθJC Thermal Resistance, Junction-to-Case (Case TOP) 0.2 • Excellent Thermal RθJB Thermal Resistance, Junction-to-Board (Case BOTTOM) 1.5 °C/W RθJA_JEDEC Thermal Resistance, Junction-to-Ambient (using JEDEC 51-2 PCB) 45 RθJA_EVB Thermal Resistance, Junction-to-Ambient (using EPC9097 EVB) 21
Static Characteristics (TJ = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
BVDSS Drain-to-Source Voltage VGS = 0 V, ID = TBD 100 V IDSS Drain-Source Leakage VDS = 80 V, VGS = 0 V 0.03 Scan QR code or click Gate-to-Source Forward Leakage VGS = 5 V 0.06 mA link below for more IGSS Gate-to-Source Forward Leakage# VGS = 5 V, TJ = 125°C 0.15 information including Gate-to-Source Reverse Leakage VGS = -4 V 0.02 reliability reports, device VGS(TH) Gate Threshold Voltage VDS = VGS, ID = 15 mA 0.8 1.1 2.5 V models, demo boards! RDS(on) Drain-Source On Resistance VGS = 5 V, ID = 50 A 1.0 mΩ VSD Source-to-Drain Forward Voltage# IS = 0.5 A, VGS = 0 V 1.6 V
https://l.ead.me/EPC2361
# Defined by design. Not subject to production test. EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2024 | For more information:
info@epc-co.com
| 1
EPC2361
EPC2361 – Enhancement Mode Power Transistor D
VDS , 100 V R
G
DS(on) , 1.0 mΩ typical
EFFICIENT POWER CONVERSION
I
PRELIMINARY
D, 101 A
S HAL Description
Gal ium Nitride’s exceptional y high electron mobility and low temperature coefficient al ows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptional y low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.
Application notes: EPC2361
• Easy-to-use and reliable gate, Gate Drive ON = 5 V typical,
Questions:
Package size: 3 x 5 mm OFF = 0 V (negative voltage not needed)
Ask a G aN Expert
• Top of FET is electrical y connected to source
Applications
• High Power PSU AC-DC Synchronous Rectification
Maximum Ratings
• High Frequency DC-DC Conversion up to 80 V
PARAMETER VALUE UNIT
input (Buck, Boost, Buck-Boost and LLC) Drain-to-Source Voltage (Continuous) 100 • 24 V–60 V Motor Drives VDS V Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150 °C) 120 • High Power Density DC-DC modules from Continuous (TA = 25°C) 101 40 V– 60 V to 5 V–12 V ID A Pulsed (25°C, TPULSE = 300 µs) 519 • Synchronous Rectification Gate-to-Source Voltage 6 • Solar MPPT VGS V Gate-to-Source Voltage -4 TJ Operating Temperature –40 to 150
Benefits
°C TSTG Storage Temperature –40 to 150 • Ultra High Efficiency • No Reverse Recovery
Thermal Characteristics
• Ultra Low QG
PARAMETER TYP UNIT
• Small Footprint RθJC Thermal Resistance, Junction-to-Case (Case TOP) 0.2 • Excellent Thermal RθJB Thermal Resistance, Junction-to-Board (Case BOTTOM) 1.5 °C/W RθJA_JEDEC Thermal Resistance, Junction-to-Ambient (using JEDEC 51-2 PCB) 45 RθJA_EVB Thermal Resistance, Junction-to-Ambient (using EPC9097 EVB) 21
Static Characteristics (TJ = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
BVDSS Drain-to-Source Voltage VGS = 0 V, ID = TBD 100 V IDSS Drain-Source Leakage VDS = 80 V, VGS = 0 V 0.03 Scan QR code or click Gate-to-Source Forward Leakage VGS = 5 V 0.06 mA link below for more IGSS Gate-to-Source Forward Leakage# VGS = 5 V, TJ = 125°C 0.15 information including Gate-to-Source Reverse Leakage VGS = -4 V 0.02 reliability reports, device VGS(TH) Gate Threshold Voltage VDS = VGS, ID = 15 mA 0.8 1.1 2.5 V models, demo boards! RDS(on) Drain-Source On Resistance VGS = 5 V, ID = 50 A 1.0 mΩ VSD Source-to-Drain Forward Voltage# IS = 0.5 A, VGS = 0 V 1.6 V
https://l.ead.me/EPC2361
# Defined by design. Not subject to production test. EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2024 | For more information:
info@epc-co.com
| 1
