Datasheet MOC3031M, MOC3032M, MOC3033M, MOC3041M, MOC3042M, MOC3043M (ON Semiconductor) - 2

ManufacturerON Semiconductor
Description6-Pin DIP Zero-Cross Triac Driver Output Optocoupler (250/400 Volt Peak)
Pages / Page12 / 2 — MOC3031M, MOC3032M, MOC3033M, MOC3041M, MOC3042M, MOC3043M. SAFETY AND …
File Format / SizePDF / 329 Kb
Document LanguageEnglish

MOC3031M, MOC3032M, MOC3033M, MOC3041M, MOC3042M, MOC3043M. SAFETY AND INSULATION RATINGS. Parameter. Characteristics. Symbol

MOC3031M, MOC3032M, MOC3033M, MOC3041M, MOC3042M, MOC3043M SAFETY AND INSULATION RATINGS Parameter Characteristics Symbol

Model Line for this Datasheet

Text Version of Document

MOC3031M, MOC3032M, MOC3033M, MOC3041M, MOC3042M, MOC3043M SAFETY AND INSULATION RATINGS
(As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.)
Parameter Characteristics
Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage <150 VRMS I–IV <300 VRMS I–IV Climatic Classification 40/85/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index 175
Symbol Parameter Value Unit
VPR Input−to−Output Test Voltage, Method A, VIORM x 1.6 = VPR, 1275 Vpeak Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC Input−to−Output Test Voltage, Method B, VIORM x 1.875 = VPR, 1594 Vpeak 100% Production Test with tm = 1 s, Partial Discharge < 5 pC VIORM Maximum Working Insulation Voltage 850 Vpeak VIOTM Highest Allowable Over−Voltage 6000 Vpeak External Creepage ≥7 mm External Clearance ≥7 mm External Clearance (for Option TV, 0.4” Lead Spacing) ≥10 mm DTI Distance Through Insulation (Insulation Thickness) ≥0.5 mm RIO Insulation Resistance at TS, VIO = 500 V >109 W
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted)
Symbol Parameter Device Value Unit TOTAL DEVICE
TSTG Storage Temperature All −40 to +125 °C TOPR Operating Temperature All −40 to +85 °C TJ Junction Temperature Range All −40 to +100 °C TSOL Lead Solder Temperature All 260 for °C 10 seconds PD Total Device Power Dissipation at 25°C Ambient All 250 mW Derate Above 25°C 2.94 mW/°C
EMITTER
IF Continuous Forward Current All 60 mA VR Reverse Voltage All 6 V PD Total Power Dissipation at 25°C Ambient All 120 mW Derate Above 25°C 1.41 mW/°C
DETECTOR
VDRM Off−State Output Terminal Voltage MOC3031M 250 V MOC3032M MOC3033M MOC3041M 400 V MOC3042M MOC3043M ITSM Peak Non−Repetitive Surge Current (Surge Cycle 60 Hz Sine Wave) All 1 Apeak ITM Peak Repetitive On−State Current All 100 mApeak PD Total Power Dissipation at 25°C Ambient All 150 mW Derate Above 25°C 1.76 mW/°C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
www.onsemi.com 2