Datasheet 2SK1056, 2SK1057, 2SK1058 (Renesas) - 4

2SK1056, 2SK1057, 2SK1058 Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage Symbol
VDSX 2SK1056 Ratings
120 2SK1057
2SK1058 Unit
V 140
160 Gate to source voltage
Drain current VGSS
ID ±15
7 V
A Body to drain diode reverse drain current
Channel dissipation IDR
1
Pch* 7
100 A
W Channel temperature
Storage temperature Tch
Tstg 150
–55 to +150 °C
°C Note: 1. Value at TC = 25°C Electrical Characteristics
(Ta = 25°C)
Item
Drain to source
breakdown voltage 2SK1056 Symbol
V(BR)DSX 2SK1057
2SK1058 Min
120 Typ
— Max
— Unit
V Test conditions
ID = 10 mA, VGS = –10 V 140
160 Gate to source breakdown voltage
Gate to source cutoff voltage V(BR)GSS
VGS(off) ±15
0.15 —
— —
1.45 V
V IG = ±100 µA, VDS = 0
ID = 100 mA, VDS = 10 V Drain to source saturation voltage
Forward transfer admittance VDS(sat)
|yfs| —
0.7 —
1.0 12
1.4 V
S ID = 7 A, VGD = 0 *
2
ID = 3 A, VDS = 10 V * Input capacitance
Output capacitance Ciss
Coss —
— 600
350 —
— pF
pF VGS = –5 V, VDS = 10 V,
f = 1 MHz Reverse transfer capacitance
Turn-on time Crss
ton —
— 10
180 —
— pF
ns VDD = 20 V, ID = 4 A toff — 60 — ns Turn-off time
Note: 2. Pulse test Rev.2.00 Sep 07, 2005 page 2 of 5 2