Datasheet AOP609 (Alpha & Omega)
| Manufacturer | Alpha & Omega |
| Description | Complementary Enhancement Mode Field Effect Transistor |
| Pages / Page | 9 / 1 — AOD609 Complementary Enhancement Mode Field Effect Transistor. General … |
| File Format / Size | PDF / 866 Kb |
| Document Language | English |
AOD609 Complementary Enhancement Mode Field Effect Transistor. General Description. Features. n-channel. p-channel
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AOD609 Complementary Enhancement Mode Field Effect Transistor General Description Features
The AOD609 uses advanced trench technology
n-channel
MOSFETs to provide excellent R and low V (V) = 40V, I = 12A (V =10V) DS(ON) DS D GS gate charge. The complementary MOSFETs may R < 30mW (V =10V) DS(ON) GS be used in H-bridge, Inverters and other R < 40mW (V =4.5V) DS(ON) GS applications.
p-channel
V (V) = -40V, I = -12A (V =-10V) DS D GS -RoHS Compliant R < 45mW (VGS= -10V) DS(ON) -Halogen Free* R < 66mW (VGS= -4.5V) DS(ON)
100% UIS Tested! 100% Rg Tested! TO-252-4L D-PAK
Top View D1/D2 Top View Bottom View D1/D2 Drain Connected to Tab G1 G2 S1 S2 G2 S2 G1
n-channel p-channel
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel Max p-channel Units
Drain-Source Voltage VDS 40 -40 V Gate-Source Voltage VGS ±20 ±20 V Continuous Drain TC=25°C 12 -12 Current B,H TC=100°C ID 12 -12 A Pulsed Drain Current B IDM 30 -30 Avalanche Current C IAR 14 -20 Repetitive avalanche energy L=0.1mH C EAR 9.8 20 mJ TC=25°C 27 30 Power Dissipation PD W TC=100°C 14 15 TA=25°C 2 2 Power Dissipation PDSM W TA=70°C 1.3 1.3 Junction and Storage Temperature Range TJ, TSTG -55 to 175 -55 to 175 °C
Thermal Characteristics: n-channel and p-channel Parameter Symbol Device Typ Max Units
Maximum Junction-to-Ambient A,D t ≤ 10s n-ch 17.4 25 °C/W Rq Steady-State JA Maximum Junction-to-Ambient A,D n-ch 50 60 °C/W Maximum Junction-to-Lead C Steady-State RqJC n-ch 4 5.5 °C/W Maximum Junction-to-Ambient A,D t ≤ 10s p-ch 16.7 25 °C/W RqJA Maximum Junction-to-Ambient A,D Steady-State p-ch 50 60 °C/W Maximum Junction-to-Lead C Steady-State RqJC p-ch 3.5 5 °C/W Rev5.0: November 2018 www.aosmd.com Page 1 of 9
The AOD609 uses advanced trench technology
n-channel
MOSFETs to provide excellent R and low V (V) = 40V, I = 12A (V =10V) DS(ON) DS D GS gate charge. The complementary MOSFETs may R < 30mW (V =10V) DS(ON) GS be used in H-bridge, Inverters and other R < 40mW (V =4.5V) DS(ON) GS applications.
p-channel
V (V) = -40V, I = -12A (V =-10V) DS D GS -RoHS Compliant R < 45mW (VGS= -10V) DS(ON) -Halogen Free* R < 66mW (VGS= -4.5V) DS(ON)
100% UIS Tested! 100% Rg Tested! TO-252-4L D-PAK
Top View D1/D2 Top View Bottom View D1/D2 Drain Connected to Tab G1 G2 S1 S2 G2 S2 G1
n-channel p-channel
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel Max p-channel Units
Drain-Source Voltage VDS 40 -40 V Gate-Source Voltage VGS ±20 ±20 V Continuous Drain TC=25°C 12 -12 Current B,H TC=100°C ID 12 -12 A Pulsed Drain Current B IDM 30 -30 Avalanche Current C IAR 14 -20 Repetitive avalanche energy L=0.1mH C EAR 9.8 20 mJ TC=25°C 27 30 Power Dissipation PD W TC=100°C 14 15 TA=25°C 2 2 Power Dissipation PDSM W TA=70°C 1.3 1.3 Junction and Storage Temperature Range TJ, TSTG -55 to 175 -55 to 175 °C
Thermal Characteristics: n-channel and p-channel Parameter Symbol Device Typ Max Units
Maximum Junction-to-Ambient A,D t ≤ 10s n-ch 17.4 25 °C/W Rq Steady-State JA Maximum Junction-to-Ambient A,D n-ch 50 60 °C/W Maximum Junction-to-Lead C Steady-State RqJC n-ch 4 5.5 °C/W Maximum Junction-to-Ambient A,D t ≤ 10s p-ch 16.7 25 °C/W RqJA Maximum Junction-to-Ambient A,D Steady-State p-ch 50 60 °C/W Maximum Junction-to-Lead C Steady-State RqJC p-ch 3.5 5 °C/W Rev5.0: November 2018 www.aosmd.com Page 1 of 9
