Datasheet JCS10N60T (JiLin Sino-Microelectronics) - 2

ManufacturerJiLin Sino-Microelectronics
DescriptionN-Channel MOSFET
Pages / Page10 / 2 — ABSOLUTE RATINGS. Value. Parameter. Symbol. Unit. JCS10N60CT JCS10N60FT
File Format / SizePDF / 1.1 Mb
Document LanguageEnglish

ABSOLUTE RATINGS. Value. Parameter. Symbol. Unit. JCS10N60CT JCS10N60FT

ABSOLUTE RATINGS Value Parameter Symbol Unit JCS10N60CT JCS10N60FT

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JCS10N60T 绝对最大额定值
ABSOLUTE RATINGS
(Tc=25℃) 数 值 项 目 符 号 单 位
Value Parameter Symbol Unit JCS10N60CT JCS10N60FT
最高漏极-源极直流电压 V Drain-Source Voltage DSS 600 600 V ID 9.5 9.5* A 连续漏极电流 T=25℃ Drain Current -continuous T=100℃ 6.0 6.0* A 最大脉冲漏极电流(注 1) I Drain Current – pulse(note 1) DM 40 40* A 最高栅源电压 V Gate-Source Voltage GSS ±30 V 单脉冲雪崩能量(注 2) E Single Pulsed Avalanche Energy(note 2) AS 713 mJ 雪崩电流(注 1) I Avalanche Current(note 1) AR 9.5 A 重复雪崩能量(注 1) E Repetitive Avalanche Current(note 1) AR 17.8 mJ 二极管反向恢复最大电压变化速率(注 3) dv/dt 4.5 V/ns Peak Diode Recovery dv/dt(note 3) PD 178 50 W 耗散功率 TC=25℃ Power Dissipation -Derate 1.43 0.4 W/℃ above 25℃ 最高结温及存储温度 T Operating and Storage Temperature Range J,TSTG -55~+150 ℃ 引线最高焊接温度 Maximum Lead Temperature for Soldering TL 300 ℃ Purposes *漏极电流由最高结温限制 *Drain current limited by maximum junction temperature 版本:201112D 2/10