Datasheet JCS10N60T (JiLin Sino-Microelectronics) - 3
| Manufacturer | JiLin Sino-Microelectronics |
| Description | N-Channel MOSFET |
| Pages / Page | 10 / 3 — ELECTRICAL CHARACTERISTICS. Parameter. Symbol. Tests conditions. Min Typ … |
| File Format / Size | PDF / 1.1 Mb |
| Document Language | English |
ELECTRICAL CHARACTERISTICS. Parameter. Symbol. Tests conditions. Min Typ Max Units. Off –Characteristics. On-Characteristics
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JCS10N60T 电特性
ELECTRICAL CHARACTERISTICS
项 目 符 号 测试条件 最小 典型 最大 单位
Parameter Symbol Tests conditions Min Typ Max Units
关态特性
Off –Characteristics
漏－源击穿电压 BV Drain-Source Voltage DSS ID=250μA, VGS=0V 600 - - V 击穿电压温度特性 ΔBV I Breakdown Voltage Temperature DSS/Δ D=250μA, referenced to - 0.68 - V/℃ T 25℃ Coefficient J VDS=600V,VGS=0V, 零栅压下漏极漏电流 - - 1 μA IDSS TC=25℃ Zero Gate Voltage Drain Current VDS=480V, TC=125℃ - - 10 μA 正向栅极体漏电流 Gate-body leakage current, IGSSF VDS=0V, VGS =30V - - 100 nA forward 反向栅极体漏电流 Gate-body leakage current, IGSSR VDS=0V, VGS =-30V - - -100 nA reverse 通态特性
On-Characteristics
阈值电压 V Gate Threshold Voltage GS(th) VDS = VGS , ID=250μA 3.0 - 4.5 V 静态导通电阻 Static Drain-Source RDS(ON) VGS =10V , ID=4.75A - 0.66 0.75 Ω On-Resistance 正向跨导 V g DS = 40V, ID=4.75A（note - 8.2 - S Forward Transconductance fs 4） 动态特性
Dynamic Characteristics
输入电容 C Input capacitance iss - 1610 2065 pF VDS=25V, 输出电容 C V Output capacitance oss - GS =0V, 156 210 pF f=1.0MHZ 反向传输电容 C - 20 26 pF Reverse transfer capacitance rss 版本：201112D 3/10
JCS10N60T 电特性
ELECTRICAL CHARACTERISTICS
项 目 符 号 测试条件 最小 典型 最大 单位
Parameter Symbol Tests conditions Min Typ Max Units
关态特性
Off –Characteristics
漏－源击穿电压 BV Drain-Source Voltage DSS ID=250μA, VGS=0V 600 - - V 击穿电压温度特性 ΔBV I Breakdown Voltage Temperature DSS/Δ D=250μA, referenced to - 0.68 - V/℃ T 25℃ Coefficient J VDS=600V,VGS=0V, 零栅压下漏极漏电流 - - 1 μA IDSS TC=25℃ Zero Gate Voltage Drain Current VDS=480V, TC=125℃ - - 10 μA 正向栅极体漏电流 Gate-body leakage current, IGSSF VDS=0V, VGS =30V - - 100 nA forward 反向栅极体漏电流 Gate-body leakage current, IGSSR VDS=0V, VGS =-30V - - -100 nA reverse 通态特性
On-Characteristics
阈值电压 V Gate Threshold Voltage GS(th) VDS = VGS , ID=250μA 3.0 - 4.5 V 静态导通电阻 Static Drain-Source RDS(ON) VGS =10V , ID=4.75A - 0.66 0.75 Ω On-Resistance 正向跨导 V g DS = 40V, ID=4.75A（note - 8.2 - S Forward Transconductance fs 4） 动态特性
Dynamic Characteristics
输入电容 C Input capacitance iss - 1610 2065 pF VDS=25V, 输出电容 C V Output capacitance oss - GS =0V, 156 210 pF f=1.0MHZ 反向传输电容 C - 20 26 pF Reverse transfer capacitance rss 版本：201112D 3/10
