Datasheet MMBT4401 (ON Semiconductor) - 4
| Manufacturer | ON Semiconductor |
| Description | NPN General Purpose Amplifier |
| Pages / Page | 10 / 4 — 2N4401 / MMBT4401. Electrical Characteristics. Symbol. Parameter. … |
| File Format / Size | PDF / 675 Kb |
| Document Language | English |
2N4401 / MMBT4401. Electrical Characteristics. Symbol. Parameter. Conditions. Min. Max. Unit. — NPN General-Purpose Amplifier. Note:
Model Line for this Datasheet
Text Version of Document
2N4401 / MMBT4401 Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol Parameter Conditions Min. Max. Unit
Collector-Emitter Breakdown V(BR)CEO Voltage(5) IC = 1.0 mA, IB = 0 40 V Collector-Base Breakdown V(BR)CBO I Voltage C = 0.1 mA, IE = 0 60 V
— NPN General-Purpose Amplifier
V(BR)EBO Emitter-Base Breakdown Voltage IE = 0.1 mA, IC = 0 6.0 V IBL Base Cut-Off Current VCE = 35 V, VEB = 0.4 V 0.1 μA ICEX Collector Cut-Off Current VCE = 35 V, VEB = 0.4 V 0.1 μA IC = 0.1 mA, VCE = 1.0 V 20 IC = 1.0 mA, VCE = 1.0 V 40 hFE DC Current Gain(5) IC = 10 mA, VCE = 1.0 V 80 IC = 150 mA, VCE = 1.0 V 100 300 IC = 500 mA, VCE = 2.0 V 40 Collector-Emitter Saturation IC = 150 mA, IB = 15 mA 0.40 VCE(sat) V Voltage(5) IC = 500 mA, IB = 50 mA 0.75 IC = 150 mA, IB = 15 mA 0.75 0.95 VBE(sat) Base-Emitter Saturation Voltage(5) V IC = 500 mA, IB = 50 mA 1.20 I f C = 20 mA, VCE = 10 V, T Current Gain - Bandwidth Product 250 MHz f = 100 MHz V C CB = 5.0 V, IE = 0, cb Collector-Base Capacitance 6.5 pF f = 140 kHz V C BE = 0.5 V, IC = 0, eb Emitter-Base Capacitance 30 pF f = 140 kHz I h C = 1.0 mA, VCE = 10 V, ie Input Impedance 1.0 15.0 kΩ f = 1.0 kHz I h C = 1.0 mA, VCE = 10 V, re Voltage Feedback Ratio 0.1 8.0 x10-4 f = 1.0 kHz I h C = 1.0 mA, VCE = 10 V, fe Small-Signal Current Gain 40 500 f = 1.0 kHz I h C = 1.0 mA, VCE = 10 V, oe Output Admittance 1.0 30 μmhos f = 1.0 kHz td Delay Time V 15 ns CC = 30 V, VEB = 2 V, I t C = 150 mA, IB1 = 15 mA r Rise Time 20 ns ts Storage Time V 225 ns CC = 30 V, IC = 150 mA, I t B1 = IB2 = 15 mA f Fall Time 30 ns
Note:
5. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%. www.onsemi.com 3
Values are at TA = 25°C unless otherwise noted.
Symbol Parameter Conditions Min. Max. Unit
Collector-Emitter Breakdown V(BR)CEO Voltage(5) IC = 1.0 mA, IB = 0 40 V Collector-Base Breakdown V(BR)CBO I Voltage C = 0.1 mA, IE = 0 60 V
— NPN General-Purpose Amplifier
V(BR)EBO Emitter-Base Breakdown Voltage IE = 0.1 mA, IC = 0 6.0 V IBL Base Cut-Off Current VCE = 35 V, VEB = 0.4 V 0.1 μA ICEX Collector Cut-Off Current VCE = 35 V, VEB = 0.4 V 0.1 μA IC = 0.1 mA, VCE = 1.0 V 20 IC = 1.0 mA, VCE = 1.0 V 40 hFE DC Current Gain(5) IC = 10 mA, VCE = 1.0 V 80 IC = 150 mA, VCE = 1.0 V 100 300 IC = 500 mA, VCE = 2.0 V 40 Collector-Emitter Saturation IC = 150 mA, IB = 15 mA 0.40 VCE(sat) V Voltage(5) IC = 500 mA, IB = 50 mA 0.75 IC = 150 mA, IB = 15 mA 0.75 0.95 VBE(sat) Base-Emitter Saturation Voltage(5) V IC = 500 mA, IB = 50 mA 1.20 I f C = 20 mA, VCE = 10 V, T Current Gain - Bandwidth Product 250 MHz f = 100 MHz V C CB = 5.0 V, IE = 0, cb Collector-Base Capacitance 6.5 pF f = 140 kHz V C BE = 0.5 V, IC = 0, eb Emitter-Base Capacitance 30 pF f = 140 kHz I h C = 1.0 mA, VCE = 10 V, ie Input Impedance 1.0 15.0 kΩ f = 1.0 kHz I h C = 1.0 mA, VCE = 10 V, re Voltage Feedback Ratio 0.1 8.0 x10-4 f = 1.0 kHz I h C = 1.0 mA, VCE = 10 V, fe Small-Signal Current Gain 40 500 f = 1.0 kHz I h C = 1.0 mA, VCE = 10 V, oe Output Admittance 1.0 30 μmhos f = 1.0 kHz td Delay Time V 15 ns CC = 30 V, VEB = 2 V, I t C = 150 mA, IB1 = 15 mA r Rise Time 20 ns ts Storage Time V 225 ns CC = 30 V, IC = 150 mA, I t B1 = IB2 = 15 mA f Fall Time 30 ns
Note:
5. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%. www.onsemi.com 3
