Datasheet BTA206X-800ET (WeEn Semiconductors) - 3
| Manufacturer | WeEn Semiconductors |
| Description | 3Q Hi-Com Triac |
| Pages / Page | 12 / 3 — WeEn Semiconductors. BTA206X-800ET. 3Q Hi-Com Triac. 8. Limiting values … |
| File Format / Size | PDF / 592 Kb |
| Document Language | English |
WeEn Semiconductors. BTA206X-800ET. 3Q Hi-Com Triac. 8. Limiting values Table 5. Limiting values. Symbol Parameter. Conditions. Min
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WeEn Semiconductors BTA206X-800ET 3Q Hi-Com Triac 8. Limiting values Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDRM repetitive peak off-state - 800 V voltage IT(RMS) RMS on-state current full sine wave; Tmb ≤ 114°C; - 6 A Fig.1; Fig. 2; Fig. 3 ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C; tp = 20 ms; - 60 A state current Fig. 4; Fig. 5 full sine wave; Tj(init) = 25 °C; tp = 16.7 ms - 66 A I2t I2t for fusing tp = 10 ms; sine wave pulse - 18 A2s dIT/dt rate of rise of on-state IG = 0.2 A - 100 A/μs current IGM peak gate current - 2 A PGM peak gate power - 5 W PG(AV) average gate power over any 20 ms period - 0.5 W Tstg storage temperature -40 150 °C Tj junction temperature - 150 °C 003aag549 8 003aag550 18 IT(RMS) IT(RMS) (A) (A) 114 °C 15 6 12 4 9 6 2 3 0 0 -50 0 50 100 150 10-2 10-1 1 10 Th (°C) surge duration (s)
Fig. 1. RMS on-state current as a function of mounting
f = 50 Hz; Th = 114 °C
base temperature; maximum values Fig. 2. RMS on-state current as a function of surge duration; maximum values
BTA206X-800ET All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2023. All rights reserved
Product data sheet 28 August 2023 3 / 12
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Isolation characteristics 11. Characteristics 12. Package outline 13. Legal information 14. Contents
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDRM repetitive peak off-state - 800 V voltage IT(RMS) RMS on-state current full sine wave; Tmb ≤ 114°C; - 6 A Fig.1; Fig. 2; Fig. 3 ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C; tp = 20 ms; - 60 A state current Fig. 4; Fig. 5 full sine wave; Tj(init) = 25 °C; tp = 16.7 ms - 66 A I2t I2t for fusing tp = 10 ms; sine wave pulse - 18 A2s dIT/dt rate of rise of on-state IG = 0.2 A - 100 A/μs current IGM peak gate current - 2 A PGM peak gate power - 5 W PG(AV) average gate power over any 20 ms period - 0.5 W Tstg storage temperature -40 150 °C Tj junction temperature - 150 °C 003aag549 8 003aag550 18 IT(RMS) IT(RMS) (A) (A) 114 °C 15 6 12 4 9 6 2 3 0 0 -50 0 50 100 150 10-2 10-1 1 10 Th (°C) surge duration (s)
Fig. 1. RMS on-state current as a function of mounting
f = 50 Hz; Th = 114 °C
base temperature; maximum values Fig. 2. RMS on-state current as a function of surge duration; maximum values
BTA206X-800ET All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2023. All rights reserved
Product data sheet 28 August 2023 3 / 12
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Isolation characteristics 11. Characteristics 12. Package outline 13. Legal information 14. Contents
