Datasheet BAV99 (NXP) - 5
| Manufacturer | NXP |
| Description | High-speed switching diodes |
| Pages / Page | 14 / 5 — NXP Semiconductors. BAV99 series. High-speed switching diodes. Fig 1. … |
| File Format / Size | PDF / 341 Kb |
| Document Language | English |
NXP Semiconductors. BAV99 series. High-speed switching diodes. Fig 1. Forward current as a function of forward. Fig 2
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NXP Semiconductors BAV99 series High-speed switching diodes
006aab132 006aab133 103 102 IR (1) IF (μA) (mA) 10 102 1 (2) 10−1 10 (3) 10−2 (1) (2) (3) (4) 10−3 1 10−4 (4) 10−1 10−5 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 20 40 60 80 100 VF (V) VR (V) (1) Tamb = 150 °C (1) Tamb = 150 °C (2) Tamb = 85 °C (2) Tamb = 85 °C (3) Tamb = 25 °C (3) Tamb = 25 °C (4) Tamb = −40 °C (4) Tamb = −40 °C
Fig 1. Forward current as a function of forward Fig 2. Reverse current as a function of reverse voltage; typical values voltage; typical values
mbg446 mbg704 0.8 102 Cd (pF) IFSM (A) 0.6 10 0.4 1 0.2 0 10−1 0 4 8 12 16 1 104 103 10 102 VR (V) tp (μs) f = 1 MHz; Tamb = 25 °C Based on square wave currents. Tj = 25 °C; prior to surge
Fig 3. Diode capacitance as a function of reverse Fig 4. Non-repetitive peak forward current as a voltage; typical values function of pulse duration; maximum values
BAV99_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 8 — 18 November 2010 5 of 14
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Test information 8.1 Quality information 9. Package outline 10. Packing information 11. Soldering 12. Revision history 13. Legal information 13.1 Data sheet status 13.2 Definitions 13.3 Disclaimers 13.4 Trademarks 14. Contact information 15. Contents
006aab132 006aab133 103 102 IR (1) IF (μA) (mA) 10 102 1 (2) 10−1 10 (3) 10−2 (1) (2) (3) (4) 10−3 1 10−4 (4) 10−1 10−5 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 20 40 60 80 100 VF (V) VR (V) (1) Tamb = 150 °C (1) Tamb = 150 °C (2) Tamb = 85 °C (2) Tamb = 85 °C (3) Tamb = 25 °C (3) Tamb = 25 °C (4) Tamb = −40 °C (4) Tamb = −40 °C
Fig 1. Forward current as a function of forward Fig 2. Reverse current as a function of reverse voltage; typical values voltage; typical values
mbg446 mbg704 0.8 102 Cd (pF) IFSM (A) 0.6 10 0.4 1 0.2 0 10−1 0 4 8 12 16 1 104 103 10 102 VR (V) tp (μs) f = 1 MHz; Tamb = 25 °C Based on square wave currents. Tj = 25 °C; prior to surge
Fig 3. Diode capacitance as a function of reverse Fig 4. Non-repetitive peak forward current as a voltage; typical values function of pulse duration; maximum values
BAV99_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 8 — 18 November 2010 5 of 14
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Test information 8.1 Quality information 9. Package outline 10. Packing information 11. Soldering 12. Revision history 13. Legal information 13.1 Data sheet status 13.2 Definitions 13.3 Disclaimers 13.4 Trademarks 14. Contact information 15. Contents
