Datasheet BF998, BF998R - 6

NXP Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs BF998; BF998R MGE812 MGE810 30 1.5 handbook, halfpage handbook, halfpage VG2-S = 4 V |y C fs| os (mS) (pF) 24 1.4 3 V 18 1.3 2 V 12 1.2 12 mA 6 1 V 1.1 10 mA 8 mA 0 V 0 1.0 −1 0 1 4 6 8 10 12 14 VG1 (V) VDS (V) VDS = 8 V; Tamb = 25 C. VG2-S = 4 V; f = 1 MHz; Tamb = 25 C. Fig.9 Forward transfer admittance as a function of Fig.10 Output capacitance as a function of gate 1 voltage; typical values. drain-source voltage; typical values. MGE809 MBH479 2.3 2.4 handbook, halfpage handbook, halfpage Cis Cis (pF) (pF) 2.1 2.3 1.9 2.2 1.7 2.1 1.5 1.3 2.0 −2.4 −1.6 −0.8 0 0.8 6 4 2 0 −2 V V G1-S (V) G2−S (V) VDS = 8 V; VG2-S = 4 V; f = 1 MHz; Tamb = 25 C. VDS = 8 V; VG1-S = 0 V; f = 1 MHz; Tamb = 25 C. Fig.11 Gate 1 input capacitance as a function of Fig.12 Gate 1 input capacitance as a function of gate 1-source voltage; typical values. gate 2-source voltage; typical values. 1996 Aug 01 6 Document Outline Features Applications Description Pinning Quick reference data Limiting values Thermal characteristics Static characteristics Dynamic characteristics Package outlines Data sheet status Definitions Disclaimers