Datasheet BF998, BF998R - 9

NXP Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs BF998; BF998R handbook, full pagewidth V V DD Vagc DD 1 nF 1 nF 140 kΩ 100 kΩ 1 nF L4 270 kΩ L3 1 nF 1 nF 50 Ω L1 output 1 nF L2 50 Ω 1 nF C3 C4 input 0.5 to 4 to 40 pF 3.5 pF C1 C2 2 to 18 pF 0.5 to 3.5 pF MGE801 1.8 kΩ 360 Ω VDD VDD = 12 V; GS = 3.3 mS; GL = 1 mS. L1 = L4 = 200 nH; 11 turns 0.5 mm copper wire, without spacing, internal diameter 3 mm. L2 = 2 cm, silvered 0.8 mm copper wire, 4 mm above ground plane. L3 = 2 cm, silvered 0.5 mm copper wire, 4 mm above ground plane. Fig.18 Gain control test circuit at f = 800 MHz. 1996 Aug 01 9 Document Outline Features Applications Description Pinning Quick reference data Limiting values Thermal characteristics Static characteristics Dynamic characteristics Package outlines Data sheet status Definitions Disclaimers