Datasheet Si7611DN (Vishay)
| Manufacturer | Vishay |
| Description | P-Channel 40-V (D-S) MOSFET |
| Pages / Page | 13 / 1 — New Product. Si7611DN. P-Channel 40-V (D-S) MOSFET. FEATURES. PRODUCT … |
| File Format / Size | PDF / 579 Kb |
| Document Language | English |
New Product. Si7611DN. P-Channel 40-V (D-S) MOSFET. FEATURES. PRODUCT SUMMARY. Halogen-free. VDS (V). RDS(on) (. ID (A). Qg (Typ.). RoHS
Model Line for this Datasheet
Text Version of Document
New Product Si7611DN
Vishay Siliconix
P-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY
•
Halogen-free VDS (V) RDS(on) (
Ω
) ID (A) Qg (Typ.)
• TrenchFET® Power MOSFET 0.025 at VGS = - 10 V - 18e • Low Thermal Resistance PowerPAK® - 40 41 nC
RoHS
Package with Small Size and Low 1.07 mm 0.033 at V
COMPLIANT
GS = - 4.5V - 18e Profile • 100 % Rg and UIS Tested
APPLICATIONS
• Load Switch
PowerPAK 1212-8
S 3.30 mm 3.30 mm 1 S S 2 S 3 G 4 D G 8 D 7 D 6 D 5 Bottom V ie w D
Ordering Information:
Si7611DN-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage VDS - 40 V Gate-Source Voltage VGS ± 20 TC = 25 °C - 18e T Continuous Drain Current (T C = 70 °C - 18e J = 150 °C) ID TA = 25 °C - 9.3a, b TA = 70 °C - 7.4a, b A Pulsed Drain Current IDM - 20 T - 18e Continuous Source-Drain Diode Current C = 25 °C IS TA = 25 °C - 3a, b Avalanche Current IAS - 23 L = 0.1 mH Single-Pulse Avalanche Energy EAS 26 mJ TC = 25 °C 39 T Maximum Power Dissipation C = 70 °C 25 PD W TA = 25 °C 3.7a, b TA = 70 °C 2.4a, b Operating Junction and Storage Temperature Range TJ, Tstg - 50 to 150 °C Soldering Recommendations (Peak Temperature)c, d 260 Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 10 s. c. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Package limited. Document Number: 69939 www.vishay.com S-80895-Rev. B, 21-Apr-08 1
Vishay Siliconix
P-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY
•
Halogen-free VDS (V) RDS(on) (
Ω
) ID (A) Qg (Typ.)
• TrenchFET® Power MOSFET 0.025 at VGS = - 10 V - 18e • Low Thermal Resistance PowerPAK® - 40 41 nC
RoHS
Package with Small Size and Low 1.07 mm 0.033 at V
COMPLIANT
GS = - 4.5V - 18e Profile • 100 % Rg and UIS Tested
APPLICATIONS
• Load Switch
PowerPAK 1212-8
S 3.30 mm 3.30 mm 1 S S 2 S 3 G 4 D G 8 D 7 D 6 D 5 Bottom V ie w D
Ordering Information:
Si7611DN-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage VDS - 40 V Gate-Source Voltage VGS ± 20 TC = 25 °C - 18e T Continuous Drain Current (T C = 70 °C - 18e J = 150 °C) ID TA = 25 °C - 9.3a, b TA = 70 °C - 7.4a, b A Pulsed Drain Current IDM - 20 T - 18e Continuous Source-Drain Diode Current C = 25 °C IS TA = 25 °C - 3a, b Avalanche Current IAS - 23 L = 0.1 mH Single-Pulse Avalanche Energy EAS 26 mJ TC = 25 °C 39 T Maximum Power Dissipation C = 70 °C 25 PD W TA = 25 °C 3.7a, b TA = 70 °C 2.4a, b Operating Junction and Storage Temperature Range TJ, Tstg - 50 to 150 °C Soldering Recommendations (Peak Temperature)c, d 260 Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 10 s. c. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Package limited. Document Number: 69939 www.vishay.com S-80895-Rev. B, 21-Apr-08 1
