Datasheet BF862 (NXP) - 3
| Manufacturer | NXP |
| Description | N-channel junction FET |
| Pages / Page | 11 / 3 — LIMITING VALUES. SYMBOL. PARAMETER. CONDITIONS. MIN. MAX. UNIT. Note. … |
| File Format / Size | PDF / 239 Kb |
| Document Language | English |
LIMITING VALUES. SYMBOL. PARAMETER. CONDITIONS. MIN. MAX. UNIT. Note. THERMAL CHARACTERISTICS. VALUE
Model Line for this Datasheet
Text Version of Document
link to page 3 link to page 3 NXP Semiconductors Product specification N-channel junction FET BF862
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage 20 V VDG drain-gate voltage 20 V VGS gate-source voltage 20 V IDS drain-source current 40 mA IG forward gate current 10 mA P tot total power dissipation Ts 90 C; note 1 300 mW Tstg storage temperature 65 +150 C Tj junction temperature 150 C
Note
1. Main heat transfer is via the gate lead.
THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-s thermal resistance from junction to soldering note 1 200 K/W point
Note
1. Soldering point of the gate lead. MCD808 400 handbook, halfpage Ptot (mW) 300 200 100 0 0 40 80 120 160 Ts (°C) Fig.2 Power derating curve. 2000 Jan 05 3 Document Outline Features Applications Description Pinning SOT23 Quick reference data Limiting values Thermal characteristics Static characteristics Dynamic characteristics Package outline Data sheet status Definitions Disclaimers
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage 20 V VDG drain-gate voltage 20 V VGS gate-source voltage 20 V IDS drain-source current 40 mA IG forward gate current 10 mA P tot total power dissipation Ts 90 C; note 1 300 mW Tstg storage temperature 65 +150 C Tj junction temperature 150 C
Note
1. Main heat transfer is via the gate lead.
THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-s thermal resistance from junction to soldering note 1 200 K/W point
Note
1. Soldering point of the gate lead. MCD808 400 handbook, halfpage Ptot (mW) 300 200 100 0 0 40 80 120 160 Ts (°C) Fig.2 Power derating curve. 2000 Jan 05 3 Document Outline Features Applications Description Pinning SOT23 Quick reference data Limiting values Thermal characteristics Static characteristics Dynamic characteristics Package outline Data sheet status Definitions Disclaimers
