Datasheets - MOSFET Single Transistors International Rectifier
Subsection: "MOSFET Single Transistors"
Manufacturer: "International Rectifier"
Manufacturers
Advanced Linear Devices Alpha & Omega Ampleon APT Avago Technologies Central Semiconductor Clare Cree Diodes Efficient Power Conversion Eudyna Devices Fairchild Freescale Fuji Electric HALO Inchange Semiconductor Infineon Integra Technologies International Rectifier International Wire Intersil IXYS IXYS RF JiLin Sino-Microelectronics Littelfuse MCC Microchip Microsemi Motorola Multicomp National Semiconductor New Jersey Semiconductor Nexperia Niko Semiconductor NTE Electronics NXP ON Semiconductor Panasonic Philips Renesas Rohm Sanyo Semelab Semikron Siliconix STMicroelectronics Taiwan Semiconductor Temic Texas Instruments Toshiba Vishay Wayon WolfspeedSeries
AUIRL7732S2TR IFR3205 IRF1010N IRF150 IRF2804 IRF2804L IRF2804S IRF3205 IRF5305 IRF5305PBF IRF5305S/L IRF5305S/LPBF IRF530N IRF530NPBF IRF530NS, IRF530NL IRF530NSPBF, IRF530NLPBF IRF540NL IRF540NS IRF6665 IRF6775M IRF7341 IRF7342 IRF7389 IRF740 IRF7425 IRF7832 IRF7832TRPBF IRF9130 IRF9510 IRF9510S IRF9530N IRF9Z24N IRFB/S/SL7730PbF IRFB/S/SL7734PbF IRFB/S/SL7787PbF IRFF9120 IRFH5406PBF IRFH7787PbF IRFR/U7740PbF IRFR/U7746PbF IRFS/SL7762PbF IRFS7730-7PPbF IRFS7734-7PPbF IRFZ44N IRFZ46N IRL3103PbF IRL3502 IRL3705N IRL540NPBF IRLR024N IRLU024N IRLZ34NSearch results: 1,467 Output: 1-20
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- HEXFET Power MOSFET Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 C ...
- HEXFET Power MOSFET Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 C ...
- HEXFET Power MOSFET Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 C ...
- HEXFET Power MOSFET
- HEXFET Power MOSFET Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized ...
- 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Advanced HEXFETÆ Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined ...
- -12A, -100V, 0.30 Ohm, P-Channel Power MOSFET
- -100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
- A 40V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET SC package rated at 58 amperes optimized with low on resistance
- 150V Single N-Channel StrongIRFET Power MOSFET in a DirectFET MZ package The StrongIRFET power MOSFET family is optimized for low R DS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ...
- 100V Single N-Channel StrongIRFET Power MOSFET in a DirectFET SH package for Audio The StrongIRFET power MOSFET family is optimized for low R DS(on) and high current capability. The devices are ideal for low frequency applications requiring ...
- HEXFET Power MOSFET
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
MOSFET, N, 100 V, 36 A, TO-220 Specifications: Continuous Drain Current Id: 30 A Current Id Max: 36 A Current Temperature: 25 C Drain Source Voltage Vds: 100 V Full Power Rating Temperature: 25 C Junction to Case Thermal Resistance A: 1.1 C/W Lead ...- HEXFET Power MOSFET, V DSS = 55 V, R DS(on) = 16.5 mΩ, I D = 30 A, TO-220AB
- HEXFET Power MOSFET, V DSS = 55 V, RDS (on) = 0.035 Ω, I D = 30 A, TO-220AB
- MOSFET, 55 V, 12 A, TO-220 Specifications: Continuous Drain Current Id: 12 A Current Id Max: -12 A Current Temperature: 25 C Drain Source Voltage Vds: 55 V Full Power Rating Temperature: 25 C Junction to Case Thermal Resistance A: 3.3 C/W Lead ...
- 55V Single N-Channel HEXFET Power MOSFET in a I-Pak package
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package- 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
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