Datasheets - MOSFET Single Transistors Nexperia
Subsection: "MOSFET Single Transistors"
Manufacturer: "Nexperia"
Manufacturers
Advanced Linear Devices Alpha & Omega Ampleon APT Avago Technologies Central Semiconductor Clare Cree Diodes Efficient Power Conversion Eudyna Devices Fairchild Freescale Fuji Electric HALO Inchange Semiconductor Infineon Integra Technologies International Rectifier International Wire Intersil IXYS IXYS RF JiLin Sino-Microelectronics Littelfuse MCC Microchip Microsemi Motorola Multicomp National Semiconductor New Jersey Semiconductor Nexperia Niko Semiconductor NTE Electronics NXP ON Semiconductor Panasonic Philips Renesas Rohm Sanyo Semelab Semikron Siliconix STMicroelectronics Taiwan Semiconductor Temic Texas Instruments Toshiba Vishay Wayon WolfspeedSeries: "GAN063-650WSA"
Series
BSP122 BUK7M3R3-40H BUK7S0R5-40H BUK7V4R2-40H BUK9M3R3-40H BUK9V13-40H GAN063-650WSA PHK12NQ03LT PMF170XP PMN50XP PMV20EN PMV60EN PSMN0R9-25YLC PSMN0R9-30ULD PSMN1R0-40ULD PSMN3R7-100BSE PSMNR55-40SSH SI2302DSSearch results: 1 Output: 1
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650 V, 50 mΩ Gallium Nitride (GaN) FET The GAN063-650WSA is a 650 V, 50 mΩ Gallium Nitride (GaN) FET. It is a normally-off device that combines Nexperia’s state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies — offering ...
